N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HS13003
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -65~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………30W
V
CBO
——Collector-Base
Voltage………………………………600V
V
CEO
——Collector-Emitter
Voltage……………………………400V
V
EB O
——Emitter-Base
Voltage………………………………9V
I
C
——Collector
Current……………………………………1.5A
1―Base，B
2
―Collector，C
3
―
Emitter，E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
I
CBO
I
EBO
f
T
t
ON
t
STG
t
F
600
400
9
10
40
0.8
0.8
1.2
10
10
8
1.1
4.0
0.7
V
V
V
V
V
V
μA
μA
MHz
μs
μs
μs
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA， I
C
=0
V
CE
=10V, I
C
=0.1A
I
C
=1A, I
B
=500mA
I
C
=0.5A, I
B
=100mA
I
C
=0.5A, I
B
=100mA
V
CB
=500V, I
E
=0
V
EB
=9V, I
C
=0
V
CE
=10V,I
C
=0.1A,f=1MHz
DC Current Gain
Collector- Emitter Saturation Voltage
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter-Base Cut-off Current
Current Gain-Bandwidth Product
Turn On Time
Storage Time
Fall Time
V
CC
=125V, I
C
=1A,
I
B1
=0.2A,I
B2
=-0.2A
R
L
=125Ω
█
h
FE
Classification
H1
10-16
H2
14-21
H3
19-26
H4
24-31
H5
29-40
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