PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
█
APPLICATIONS
PNP Epitaxial Darlington Transistor. High DC Current Gain.
Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
HP127W
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
TO-263
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃）
（
……………………………65W
P
C
——Collector
Dissipation（Ta=25℃）……………………………2W
V
CBO
——Collector-Base
Voltage………………………………-100V
V
CEO
——Collector-Emitter
Voltage……………………………-100V
V
E B O
——Emitter
-Base Voltage………………………………-5V
I
C
——Collector
Current DC）
（
………………………………………-5A
I
C
——Collector
Current（Pulse）……………………………………-8A
Ib——Base Current……………………………………………-120mA
1―Base，B
2―Collector，
C
3―Emitter，E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
BV
CBO
BV
CEO
H
FE
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
*DC Current Gain
Min Typ Max Unit
－１００
－１００
１０００
－２．０
－４．０
－２．５
Ｖ
Ｖ
Ｖ
Ｖ
Ｖ
Test Conditions
I
C
=-1mA,
I
C
=-5mA,
I =0
E
I =0
B
V
CE
=-3V, I
C
=-0.5A
I
C
=-3A, I
B
=-12mA
I
C
=-3A, I
B
=-20mA
V
CE
=-3V, I
C
=-3A
V
CE(sat1)
*Collector- Emitter Saturation Voltage
V
CE(sat2)
*Collector- Emitter Saturation Voltage
V
BE(ON)
I
CEO
I
CBO
I
EBO
Cob
*Base-Emitter On Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Output Capacitance
－０．５ ½Ａ
V
CB
=-50V, I
B
=0
－０．２ ½Ａ
V
CB
=-100V, I
E
=0
－２．０ ½Ａ
V
EB
=-5V, I
C
=0
３００ ½Ｆ
V
CB
=-10V, I
E
=0，f=0.1ＭＨ½
*
Pulse Test：PW≤300μ½，Ｄ½½½ ½½½½½≤2%
PNP S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP127W
微控制器 MCU
京公网安备 11010802033920号
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