NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP122
█
APPLICATIONS
NPN Epitaxial Darlington Transistor. High DC Current Gain.
Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation Tc=25℃）
（
……………………………65W
P
C
——Collector
Dissipation（Ta=25℃）……………………………2W
V
CBO
——Collector-Base
Voltage………………………………100V
V
CEO
——Collector-Emitter
Voltage……………………………100V
V
E B O
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current（DC）………………………………………5A
I
C
——Collector
Current（Pulse）……………………………………8A
Ib——Base Current………………………………………………120mA
TO-220
1―Base，B
2―Collector，
C
3―Emitter，E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
BV
CBO
BV
CEO
H
FE
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
*DC Current Gain
Min
100
100
1000
2.0
4.0
2.5
0.5
0.2
2.0
200
cycle≤2%
Typ
Max
Unit
V
V
V
V
V
mA
mA
mA
pF
Test Conditions
I
C
=1mA,
I
C
=5mA,
I
E
=0
I
B
=0
V
CE
=3V, I
C
=0.5A
I
C
=3A, I
B
=12mA
I
C
=3A, I
B
=20mA
V
CE
=3V, I
C
=3A
V
CB
=50V, I
B
=0
V
CB
=100V, I
E
=0
V
EB
=5V, I
C
=0
V
CB
=10V, I
E
=0，f=0.1MHz
V
CE(sat1)
*Collector- Emitter Saturation Voltage
V
CE(sat2)
*Collector- Emitter Saturation Voltage
V
BE(ON)
*Base-Emitter On Voltage
I
CEO
I
CBO
I
EBO
Cob
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Output Capacitance
*
Pulse Test：PW≤300μs，Duty
NPN S I L I C O N T R A N S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HP122
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