Shantou Huashan Electronic Devices Co.,Ltd.
N PN S I L I C O N T R A N S I S T O R
HD880
█
APPLICATIONS
Low Frequency Power Amplifier.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
-55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 30W
V
CBO
——Collector-Base
Voltage……………………………60V
V
CEO
——Collector-Emitter
Voltage………………………… 60V
V
EBO
——Emitter-Base
Voltage……………………………… 7V
I
C
——Collector
Current……………………………………… 3A
Ib——Base Current………………………………………0.3A
TO-220
1―
Base，B
2―Collector，C
3―Emitter, E
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
CBO
I
EBO
60
100
100
60
20
0.4
0.7
3
70
0.8
1.5
0.8
1
1
300
V
I
C
=50mA,
I
B
=0
μA
V
CB
=60V, I
E
=0
μA
V
EB
=7V, I
C
=0
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=3A
V
V
MHz
pF
μS
μS
μS
I
C
=3A, I
B
=0.3A
V
CE
=5V, I
C
=0.5A
V
CE
=5V, I
C
=0.5A,
V
CB
=10V, I
E
=0，f=1MHz
I
B1
= -I
B2
=0.2A
V
CC
=30V
Emitter Cut-off Current
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
V
BE(on)
f
t
Cob
t
ON
t
STG
t
F
Collector- Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Storage Time
Fall Time
█
h
FE
Classification
O
60—120
Y
100—200
GR
150—300
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