Shantou Huashan Electronic Devices Co.,Ltd.
HBS170
N-Channel Enhancement Mode Field Effect Transistor
█
General Description
These products have been designed to minimize on-state resistance
While provide rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to 500mA DC. These
products are particularly suited for low voltage, low current applications
such as small servo motor control, power MOSFET gate drivers, and
other switching applications.
TO-92
1- D
2-G
3-S
█
Features
High density cell design for low Rds(on).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
█
Maximum Ratings
（Ta=25
℃
unless otherwise specified）
T
stg
——Storage
Temperature ------------------------------------------------------
-55~150℃
T
j
——Operating
Junction Temperature ----------------------------------------------
-55~150℃
V
DSS
——
Drain-Source Voltage ---------------------------------------------------------- 60V
V
DGR
——
Drain-Gate Voltage (R
GS
≤1MΩ)
---------------------------------------------------------
V
GSS
——
Gate-Source Voltage ------------------------------------------------------------------------
I
D
——
Drain Current (Continuous) ----------------------------------------------------------------
P
D
——
Maximum Power Dissipation
------------------------------------------------------------
60V
±
20V
500mA
0.83W
█
Electrical Characteristics
（Ta=25
℃
unless otherwise specified）
Symbol
BV
DSS
I
DSS
I
GSSF
V
GS(TH)
R
DS(ON)
Items
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate – Body Leakage, Forward
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Time
Turn - Off Time
320
24
17
7
Min.
60
0.5
10
0.8
3.0
5
40
30
10
10
10
Typ.
Max.
Unit
V
uA
nA
V
Conditions
V
GS
=0V, I
D
=100uA
V
DS
=25V, V
GS
=0V
V
GS
=15V , V
DS
=0V
V
DS
= V
GS
, I
D
=1mA
V
GS
=10V, I
D
=200mA
V
DS
=10V, I
D
=200mA
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
V
DD
= 25 V, I
D
= 200 m A,
V
GS
= 10 V, R
GEN
= 25
Ω
Ω
mS
pF
pF
pF
nS
nS
g
FS
Ciss
Coss
Crss
ton
toff
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