Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
HB834
█ APPLICATIONS
Low Frequency Power Amplifier.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature…………………………
－55~150℃
T
j
——Junction
Temperature……………………………… 150℃
P
C
——Collector
Dissipation（T
c
=25℃）…………………… 30W
P
C
——Collector
Dissipation（Ta=25℃）……………………1.5W
V
CBO
——Collector-Base
Voltage……………………………-60V
V
CEO
——Collector-Emitter
Voltage………………………… -60V
V
EBO
——Emitter-Base
Voltage……………………………… -7V
I
C
——Collector
Current……………………………………… -3A
Ib——Base Current………………………………………-0.5A
TO-220
1―
Base，B
2―Collector，C
3―Emitter, E
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Min
Typ
Max
Unit
Test Conditions
BV
CEO
I
CBO
I
EBO
－６０
６０
２０
－０．５
－０．７
９
１５０
０．４
１．７
０．５
Emitter Cut-off Current
Ｖ
I
C
=-50mA, I =0
B
－１００ μＡ
V
CB
=-60V, I
E
=0
－１００ μＡ
V
EB
=-7V, I
C
=0
２００
－１
－１
V
CE
=-5V, I
C
=-0.5A
V
CE
=-5V, I
C
=-3A
H
FE（1）
DC Current Gain
H
FE（2）
DC Current Gain
V
CE(sat)
Collector- Emitter Saturation Voltage
V
BE(on)
Base-Emitter On Voltage
f
t
Cob
t
ON
t
STG
t
F
Current Gain-Bandwidth Product
Ｖ
I
C
=-3A, I
B
=-0.3A
Ｖ
V
CE
=-5V, I
C
=-0.5A
ＭＨ½
V
CE
=-5V, I
C
=-0.5A,
½Ｆ
V
CB
=-10V, I
E
=0，f=1ＭＨ½
μＳ
μＳ
μＳ
I
B1
= -I
B2
=-0.2A
V
CC
=-30V
Output Capacitance
Turn-On Time
Storage Time
Fall Time
█
h
FE
Classification
O
６０—１２０
Y
１００—２００
微控制器 MCU
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