Shantou Huashan Electronic Devices Co.,Ltd.
H8050
█
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS
B PUSH-PULL OPERATION.
█
ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Juncttion
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………1W
V
CBO
——Collector-Base
Voltage………………………………40V
V
CEO
——Collector-Emitter
Voltage……………………………25V
V
EB O
——Emitter-Base
Voltage………………………………6V
I
C
——Collector
Current………………………………………1.5A
1―Emitter，E
2―Base，B
3―Collector，
C
TO-92
█
ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base- Emitter Voltage
Base- Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter- Base Breakdown Voltage
Output Capacacitance
Current Gain-Bandwidth Product
Min
Typ
Max
Unit
Test Conditions
I
CBO
I
EBO
H
FE
V
BE
V
BE(sat)
BV
CBO
BV
CEO
BV
EBO
Cob
f
T
0.1
0.1
85
40
1
0.5
1.2
40
25
6
9.0
100
500
μA
μA
V
CB
=35V, I
E
=0
V
EB
=6V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
V
V
V
V
V
V
pF
MHz
V
CE
=1V, I
C
=10mA
I
C
=800mA, I
B
=80mA
I
C
=800mA,I
B
=80mA
I
C
=100μA，I
E
=0
I
C
=2mA，I
B
=0
I
E
=100μA，I
C
=0
V
CB
=10V,I
E
=0，f=1MHz
V
CE
=10V, I
C
=50mA
V
CE(sat）
Collector- Emitter Saturation Voltage
█
h
FE
Classification
B
C
120—200
D
160—300
E
270—500
85—160
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