ECO-PAC
TM
2
IGBT Module
PSIG 130/06
PSIS 130/06*
PSSI 130/06*
PSI 130/06*
I
C25
= 121 A
V
CES
= 600 V
V
CE(sat)typ.
= 2.3 V
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
OP 9
L9
E2
K10
X16
X13
GH 10
NTC
X15
VX 18
AC 1
L9
T16
X15
NTC
X16
IK 10
X15
NTC
X16
L9
F1
IK 10
AC 1
PSI 130/06*
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
Conditions
T
VJ
= 25°C to 150°C
PSIS 130/06*
*NTC optional
PSSI 130/06*
LMN S
A IJK
Maximum Ratings
600
± 20
121
83
200
360
10
379
V
V
A
A
A
V
µs
W
PSIG 130/06
Features
V
GE
= ±15 V; R
G
= 2.2
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 2.2
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Package with DCB ceramic base plate
Isolation voltage 3000 V∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.3
2.6
4.5
2.9
6.5
1.2
7.5
400
25
11
150
30
0.8
2.3
4.2
0.66
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.33 K/W
K/W
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 130 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1.5 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
Leads with expansion bend for
stress relief
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 80 A
V
GE
= 15/0 V; R
G
= 2.2
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are
sensitive to electrostatic discharge.
Users should observe proper ESD
handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 130/06
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 80 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 60 A; di
F
/dt = 500 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Maximum Ratings
134.0
82.3
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSI
Characteristic Values
min.
typ. max.
1.85
1.40
28
100
1.32
2.06
V
V
A
ns
0.66 K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ.
max.
4.75
5.0
3375
5.25 kΩ
K
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Conditions
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
PSSI
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
PSIG
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
京公网安备 11010802033920号
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