ECO-PAC
TM
2
IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
AC 1
X15
NTC
X16
L9
F1
AC 1
IK 10
PSIG 100/12
PSIS 100/12*
PSSI 100/12*
I
C25
= 138 A
V
CES
= 1200 V
V
CE(sat)typ.
= 2.8 V
LMN S
A IJK
L9
T16
X15
NTC
IK 10
PSIG 100/12
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
Conditions
T
VJ
= 25°C to 150°C
X16
PSIS 100/12*
PSSI 100/12*
*NTC optional
Maximum Ratings
1200
± 20
138
94
150
V
CES
10
568
V
V
A
A
A
µs
W
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
V
GE
= ±15 V; R
G
= 15
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 15
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
Package with DCB ceramic
base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL registered, E 148688
Applications
AC and DC motor control
AC servo and robot drives
power supplies
welding inverters
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
2.8
3.2
4.5
3.4
6.5
5
16
320
100
50
650
50
12.1
10.5
5.5
0.44
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
0.22 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
I
C
= 125 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 3 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and
power cycling capability
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 75 A
V
GE
= 15/0 V; R
G
= 15
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 75 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 75 A; di
F
/dt = 750 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Maximum Ratings
154
97
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
PSIG
Characteristic Values
min.
typ. max.
2.2
1.6
79
220
0.9
2.5
V
V
A
ns
0.45 K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
PSSI
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Conditions
Maximum Ratings
-40...+150
-40...+150
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
PSIS
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
175
A
150
I
C
125
T
J
= 25°C
V
GE
=17V
15V
13V
11V
175
A
150
I
C
125
100
75
T
J
= 125°C
V
GE
=17V
15V
13V
11V
100
75
50
25
0
0,0
9V
50
25
9V
121T120
0
121T120
0,5
1,0
1,5
2,0
2,5
V
CE
3,0
V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
V
CE
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150
125
A
I
C
V
CE
= 20V
T
J
= 25°C
300
A
250
I
F
200
150
100
50
121T120
T
J
= 125°C
T
J
= 25°C
100
75
50
25
0
0
121T120
5
6
7
8
9
10
V
GE
11
V
0,5
1,0
1,5
2,0
2,5
V
F
3,0
V
3,5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
120
20
V
V
GE
15
V
CE
= 600V
I
C
= 75A
300
ns
t
rr
A
I
RM
t
rr
80
200
10
40
5
I
RM
T
J
= 125°C
V
R
= 600V
I
F
= 75A
100
0
121T120
0
121T120
0
100
200
300
Q
G
400
nC
0
200
400
600
800
A/µs
-di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSIG PSIS PSSI 100/12
40
mJ
E
on
E
on
t
d(on)
t
r
160
ns
120
t
20
mJ
E
off
15
E
off
t
d(off)
800
ns
600
t
400
30
20
80
10
V
CE
= 600V
V
GE
= ±15V
10
V
CE
= 600V
V
GE
= ±15V
40
R
G
= 15Ω
T
J
= 125°C
121T120
5
R
G
= 15Ω
200
T
J
= 125°C
121T120
0
0
50
100
I
C
150
A
0
0
t
f
0
50
100
I
C
150 A
0
Fig. 7 Typ. turn on energy and switching
times versus collector current
25
mJ
200
ns
160
t
120
t
r
80
40
0
48
Ω
56
121T120
Fig. 8 Typ. turn off energy and switching
times versus collector current
25
mJ
E
off
2000
t
d(off)
ns
1600
t
E
off
1200
800
400
121T120
20
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125°C
t
d(on)
E
on
20
15
10
5
0
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125°C
15
10
5
0
0
8
16
24
32
40
R
G
0
8
16
24
32
R
G
40
0
48
Ω
56
t
f
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
1
K/W
0,1
Z
thJC
0,01
R
G
= 15Ω
T
J
= 125°C
V
CEK
< V
CES
Fig.10 Typ. turn off energy and switching
times versus gate resistor
200
A
160
I
CM
120
80
40
0
121T120
diode
IGBT
0,001
0,0001
single pulse
VID...125-12P1
0
200
400
600
800 1000 1200
V
V
CE
0,00001
0,00001 0,0001
0,001
0,01
t
0,1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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