2N3498U4 thru 2N3501U4
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366
DESCRIPTION
This family of 2N3498U4 through 2N3501U4 epitaxial planar transistors are military qualified
up to a JANTXV level for high-reliability applications. These devices are also available in TO-
39 and TO-5 packaging. Microsemi also offers numerous other transistor products to meet
higher and lower power ratings with various switching speed requirements in both through-
hole and surface-mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
U4 Package
Also available in:
TO-39
(TO-205AD)
package
(leaded)
2N3498 – 2N3501
FEATURES
•
•
•
Surface mount equivalent of JEDEC registered 2N3498 through 2N3501 number series.
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/366.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
•
•
•
General purpose transistors for medium power applications requiring high frequency switching.
Low package profile.
Military and other high-reliability applications.
TO-5 package
(long-leaded)
2N3498L – 2N3501L
MAXIMUM RATINGS
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
Total Power Dissipation
@ T
A
= +25 °C
(2)
@ T
C
= +25 °C
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
C
R
ӨJA
R
ӨJC
P
T
T
J
, T
stg
2N3498U4
2N3499U4
100
100
6.0
500
2N3500U4
2N3501U4
150
150
6.0
300
Unit
V
V
V
mA
o
o
175
15
1.0
4.0
-65 to +200
C/W
C/W
W
°C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Operating & Storage Junction Temperature Range
Notes:
1. See
figure 1.
2. See
figure 2.
T4-LDS-0276-2, Rev. 1 (121224)
©2012 Microsemi Corporation
Page 1 of 6
2N3498U4 thru 2N3501U4
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed, aluminum nitride (AlN) ceramic body with gold over nickel plated kovar lid.
TERMINALS: Gold over nickel plated surface mount terminations.
MARKING: Part number, date code, manufacturer’s ID.
POLARITY: See package dimensions.
TAPE & REEL option: Standard per EIA-481D. Consult factory for quantities.
WEIGHT: 0.125 grams (125 milligrams).
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
Blank = Commercial
JEDEC type number
(see
Electrical Characteristics
table)
2N3498
U4 (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount package
Symbol
C
obo
I
CEO
I
CEX
I
EBO
h
FE
V
CEO
V
CBO
V
EBO
SYMBOLS & DEFINITIONS
Definition
Common-base open-circuit output capacitance
Collector cutoff current, base open
Collector cutoff current, circuit between base and emitter
Emitter cutoff current, collector open
Common-emitter static forward current transfer ratio
Collector-emitter voltage, base open
Collector-emitter voltage, emitter open
Emitter-base voltage, collector open
T4-LDS-0276-2, Rev. 1 (121224)
©2012 Microsemi Corporation
Page 2 of 6
2N3498U4 thru 2N3501U4
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, pulsed
Collector-Base Cutoff Current
V
CB
= 50 V
V
CB
= 75 V
V
CB
= 100 V
V
CB
= 150 V
Emitter-Base Cutoff Current
V
EB
= 4.0 V
V
EB
= 6.0 V
2N3498U4, 2N3499U4
2N3500U4, 2N3501U4
2N3498U4,
2N3500U4,
2N3498U4,
2N3500U4,
2N3499U4
2N3501U4
2N3499U4
2N3501U4
V
(BR)
CEO
I
CBO
100
150
50
50
10
10
25
10
V
nA
nA
µA
µA
nA
µA
I
EBO
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 300 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 300 mA, I
B
= 30 mA
I
C
= 150 mA, I
B
= 15 mA
Base-Emitter Saturation Voltage
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 300 mA, I
B
= 30 mA
I
C
= 150 mA, I
B
= 15 mA
2N3498U4,
2N3499U4,
2N3498U4,
2N3499U4,
2N3498U4,
2N3499U4,
2N3498U4,
2N3499U4,
2N3500U4
2N3501U4
2N3500U4
2N3501U4
2N3500U4
2N3501U4
2N3500U4
2N3501U4
2N3500U4
2N3501U4
2N3498U4
2N3499U4
h
FE
20
35
25
50
35
75
40
100
15
20
15
20
120
300
All Types
2N3498U4, 2N3499U4
2N3500U4, 2N3501U4
All Types
2N3498U4, 2N3499U4
2N3500U4, 2N3501U4
V
CE(sat)
0.2
0.6
0.4
0.8
1.4
1.2
V
V
BE(sat)
V
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 20 mA, V
CE
= 20 V, f = 100 MHz
Output Capacitance
2N3498U4, 2N3499U4
V
CB
= 10 V, I
E
= 0,
2N3500U4, 2N3501U4
100 kHz < f < 1.0 MHz
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, 100 kHz < f < 1.0 MHz
(1) Pulse Test: pulse width = 300
µs,
duty cycle < 2.0%.
|h
fe
|
C
obo
1.5
8.0
10
8.0
80
pF
C
ibo
pF
T4-LDS-0276-2, Rev. 1 (121224)
©2012 Microsemi Corporation
Page 3 of 6
2N3498U4 thru 2N3501U4
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
SWITCHING CHARACTERISTICS
Characteristic
Turn-On Time
V
EB
= 5 V; I
C
= 150 mA; I
B1
=
15 mA
Turn-Off Time
I
C
= 150 mA; I
B1
=
I
B2
= -
15 mA
Symbol
t
on
t
off
Min.
Max.
115
1150
Unit
ns
ns
SAFE OPERATING AREA (See SOA figure and reference
MIL-STD-750 method 3053)
DC Tests
T
C
= +25
o
C, t
r
> 10 ns; 1 Cycle, t = 1.0 s
Test 1
V
CE
= 10 V, I
C
= 500 mA
2N3498U4, 2N3499U4
2N3500U4, 2N3501U4
V
CE
= 16.67 V, I
C
= 300 mA
Test 2
V
CE
= 50 V, I
C
= 100 mA
All Types
Test 3
V
CE
= 80 V, I
C
= 40 mA
All Types
Clamped Switching
T
A
= +25
o
C
Test 1
I
B
= 85 mA, I
C
= 500 mA
2N3498U4, 2N3499U4
I
B
= 50 mA, I
C
= 300 mA
2N3500U4, 2N3501U4
I
C
Collector Current (Milliamperes)
V
CE
Collector to Emitter Voltage (Volts)
Maximum Safe Operating Area
T4-LDS-0276-2, Rev. 1 (121224)
©2012 Microsemi Corporation
Page 4 of 6
2N3498U4 thru 2N3501U4
GRAPHS
DC Operation Maximum Rating (W)
T
C
(°C) (Case)
FIGURE 1
Derating for all devices (R
θJC
)
Theta ( C/W)
o
Time (s)
FIGURE 2
Thermal Impedance Graph (R
θJC
)
T4-LDS-0276-2, Rev. 1 (121224)
©2012 Microsemi Corporation
Page 5 of 6
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