Datasheet> 器件分类 > 分立半导体> 晶体管> NE851M13-T3-A-FB

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NE851M13-T3-A-FB: 产品描述L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3; 产品类别分立半导体晶体管; 文件大小264KB，共21页; 制造商Renesas(瑞萨电子); 官网地址https://www.renesas.com/

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NE851M13-T3-A-FB概述

L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3

NE851M13-T3-A-FB规格参数

参数名称	属性值
厂商名称	Renesas(瑞萨电子)
包装说明	SMALL OUTLINE, R-PDSO-F3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	0.1 A
基于收集器的最大容量	0.8 pF
集电极-发射极最大电压	5.5 V
配置	SINGLE
最高频带	L BAND
JESD-30 代码	R-PDSO-F3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	6500 MHz

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NPN SILICON RF TRANSISTOR

NE851M13 / 2SC5801

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN LEAD-LESS MINIMOLD

FEATURES

• Low phase distortion, low voltage operation

• Ideal for OSC applications

• 3-pin lead-less minimold package

ORDERING INFORMATION

Part Number

NE851M13-A

2SC5801-A

NE851M13-T3-A

2SC5801-T3-A

10 kpcs/reel

• Pin 2 (Base) face the perforation side of the tape

Quantity

50 pcs (Non reel)

Supplying Form

• 8 mm wide embossed taping

Remark

To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

= +25C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

CBO

CEO

EBO

tot

Note

Ratings

9.0

5.5

1.5

100

140

150

65

to +150

Unit

C

stg

Note

Mounted on 1.08 cm



1.0 mm (t) glass epoxy PCB

Caution

Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PU10085EJ02V0DS (2nd edition)

Date Published March 2002 CP(K)

The mark



shows major revised points.

NE851M13-T3-A-FB相似产品对比

	NE851M13-T3-A-FB	2SC5801-T3-A	2SC5801-A	2SC5801-A-FB	2SC5801-T3-A-FB	NE851M13-T3-A	NE851M13-A	NE851M13-A-FB
描述	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3	2SC5801-T3-A	2SC5801-A	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, LEADLESS MINIMOLD PACKAGE-3
包装说明	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
针数	3	3	3	3	3	3	3	3
Reach Compliance Code	unknown	unknow	unknow	compli	compli	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
基于收集器的最大容量	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF	0.8 pF
集电极-发射极最大电压	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最高频带	L BAND	L BAND	L BAND	L BAND	L BAND	L BAND	L BAND	L BAND
JESD-30 代码	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	6500 MHz	6500 MHz	6500 MHz	6500 MHz	6500 MHz	6500 MHz	6500 MHz	6500 MHz
是否Rohs认证	-	符合	符合	符合	符合	符合	-	-

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