NPN SILICON RF TRANSISTOR
NE68719
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR LOW-NOISE MICROWAVE AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
• Low noise
NF = 1.3 dB TYP. @ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• 3-pin ultra super minimold package
ORDERING INFORMATION
Part Number
NE68719-A
NE68719-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
5
3
2
30
90
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10213EJ01V0DS (1st edition)
(Previous No. P12110EJ2V0DS00)
Date Published January 2003 CP(K)
The mark
shows major revised points.
©
NEC Compound Semiconductor Devices 1994,
NE68719
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
Reverse Transfer Capacitance
f
T
f
T
⏐S
21e
⏐
⏐S
21e
⏐
NF
NF
C
re
Note 2
2
2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
I
CBO
I
EBO
h
FE
Note 1
V
CB
= 5 V, I
E
= 0 mA
V
EB
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 20 mA
–
–
70
–
–
–
100
100
140
nA
nA
–
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
9
7
8.5
6.0
–
–
–
11
9
10
7.5
1.3
1.3
0.4
–
–
–
–
2.0
2.0
0.8
GHz
GHz
dB
dB
dB
dB
pF
Notes 1.
Pulse measurement: PW
≤
350
μ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value
FB
86
70 to 140
2
Data Sheet PU10213EJ01V0DS
NE68719
TYPICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Reverse Transfer Capacitance C
re
(pF)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.8
f = 1 MHz
0.6
250
Total Power Dissipation P
tot
(mW)
Free Air
200
150
0.4
100
90
50
0.2
0
25
50
75
100
125
150
0
2
4
6
8
10
Ambient Temperature T
A
(˚C)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 2 V
Collector Current I
C
(mA)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
40
20
30
15
20
10
10
5
200
μ
A
180
μ
A
160
μ
A
140
μ
A
120
μ
A
100
μ
A
80
μ
A
60
μ
A
40
μ
A
I
B
= 20
μ
A
0
0.5
Base to Emitter Voltage V
BE
(V)
1.0
0
1
2
3
4
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
Gain Bandwidth Product f
T
(GHz)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
15
V
CE
= 2 V
DC Current Gain h
FE
200
V
CE
= 2 V
100
50
1V
1V
10
20
10
1
2
5
10
20
50
100
5
0.7
1
2
3
5
7
10
20 30
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Data Sheet PU10213EJ01V0DS
3
NE68719
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
3
Insertion Power Gain |S
21e
|
2
(dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
f = 2 GHz
Noise Figure NF (dB)
f = 2 GHz
10
V
CE
= 2 V
1V
2
V
CE
= 1 V
2V
1
5
0
0.7
1
2
3
5
7
10
20 30
0.5
1
2
3
5
7
10
20 30
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Remark
The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave]
→
[Device Parameters]
URL http://www.csd-nec.com/
4
Data Sheet PU10213EJ01V0DS
NE68719
PACKAGE DIMENSIONS
3-PIN ULTRA SUPER MINIMOLD (UNIT: mm)
1.6±0.1
0.8±0.1
2
0.5
1.6±0.1
0.2
+0.1
–0
86
0.5
3
1
0.75±0.05
0.6
0 to 0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15
+0.1
–0.05
0.3
+0.1
–0
1.0
Data Sheet PU10213EJ01V0DS
5
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