Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.
QUICK REFERENCE DATA
SYMBOL
V
CESM
I
C
I
CM
P
tot
V
CEsat
V
CEO
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter voltage (open base)
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
T
hs
≤
25 ˚C
I
C
= 8.0 A; I
B
= 1.6 A
I
Csat
= 8.0 A; I
B(end)
= 1.1 A
TYP.
-
-
-
-
-
-
8.0
3.0
MAX.
1500
12
30
45
5.0
800
-
4.0
UNIT
V
A
A
W
V
V
A
µs
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
12
30
8
12
200
9
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
1
Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
R
EB
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Base-emitter resistance
Emitter-base breakdown voltage
Collector emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 6.0 V; I
C
= 0 A
V
EB
= 6.0 V
I
B
= 600 mA
I
B
= O A;I
C
= 1OO mA;
L= 25 mH
I
C
= 8.0 A; I
B
= 1.6 A
I
C
= 8.0 A; I
B
= 1.6 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 8 A; V
CE
= 5 V
I
F
= 8 A
MIN.
-
-
72
-
7.5
800
-
-
-
5
-
TYP.
-
-
110
55
13.5
-
-
-
11
7
1.6
MAX.
1.0
2.0
218
-
-
-
5.0
1.1
-
9.5
2.0
UNIT
mA
mA
mA
Ω
V
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (32 kHz line
deflection circuit)
t
s
t
f
V
fr
t
fr
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 8.0 A; L
C
= 260
µH;
C
fb
= 13 nF;
I
B(end)
= 1.1 A; L
B
= 2.5
µH;
-V
BB
= 4 V;
(-dI
B
/dt = 1.6 A/µs)
TYP.
145
MAX.
-
UNIT
pF
3.0
0.2
16
410
4.0
0.35
-
-
µs
µs
V
ns
I
F
= 8 A; dI
F
/dt = 50 A/µs
V
F
= 5 V
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
TRANSISTOR
IC
DIODE
I
Csat
+ 150 v nominal
adjust for ICsat
t
Lc
IB
IBend
t
10us
13us
D.U.T.
IBend
LB
Cfb
Rbe
32us
VCE
-VBB
t
Fig.1. Switching times waveforms.
Fig.4. Switching times test circuit.
ICsat
90 %
IC
100
hFE
BU2525DF
Tj = 25 C
Tj = 125 C
5V
10 %
tf
ts
IB
IBend
t
10
1V
t
1
0.1
1
10
IC / A
100
- IBM
Fig.2. Switching times definitions.
Fig.5. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
I
F
I
F
1.2
1.1
1
VBESAT / V
Tj = 25 C
Tj = 125 C
BU2525AF
10%
t fr
V
F
time
0.9
0.8
0.7
0.6
IC/IB=
3
4
5
0.1
1
IC / A
10
5V
V
F
time
V
fr
0.5
0.4
Fig.3. Definition of anti-parallel diode V
fr
and t
fr
Fig.6. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
1
0.9
0.8
0.7
0.6
0.5
VCESAT / V
IC/IB =
5
4
3
BU2525AF
1000
Eoff / uJ
IC = 8 A
BU2525AF
7A
100
Tj = 25 C
0.4
0.3
0.2
0.1
0
0.1
Tj = 125 C
1
IC / A
10
100
10
0.1
1
IB / A
10
Fig.7. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.10. Typical turn-off losses. T
j
= 85˚C
Eoff = f (I
B
); parameter I
C
; f = 32 kHz
1.2
1.1
1
0.9
VBESAT / V
Tj = 25 C
Tj = 125 C
BU2525AF
IC=
0.8
0.7
0.6
0
1
2
IB / A
3
8A
6A
5A
4A
4
12
11
10
9
8
7
6
5
4
3
2
1
0
ts, tf / us
32 kHz
BU2525AF
ts
IC =
8A
7A
0.1
1
IB / A
tf
10
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.11. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 32 kHz
Normalised Power Derating
with heatsink compound
10
VCESAT / V
BU2525AF
Tj = 25 C
Tj = 125 C
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
8A
1
6A
5A
IC = 4 A
0.1
0.1
1
IB / A
10
0
20
40
60
80
Ths / C
100
120
140
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.12. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
hs
)
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DX
10
Zth / (K/W)
BU2525AF
IC / A
100
BU2525AF
tp =
1
0.5
0.2
0.1
0.05
0.02
ICM
= 0.01
40 us
ICDC
P
D
t
p
D=
t
p
T
t
0.1
10
100 us
0.01
D=0
0.001
1E-06
1E-04
1E-02
t/s
T
1E+00
Fig.13. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Ptot
1
1 ms
0.1
10 ms
DC
0.01
1
10
100
1000 VCE / V
Fig.14. Forward bias safe operating area. T
hs
= 25 ˚C
I
CDC
& I
CM
= f(V
CE
); I
CM
single pulse; parameter t
p
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
September 1997
5
Rev 1.200
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