Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2525A
DESCRIPTION
・With
TO-3PN package
・High
voltage
・High
speed switching
APPLICATIONS
・For
use in horizontal deflection circuits of
large screen colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
固电
IN
导½
半
PARAMETER
CONDITIONS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
ANG
CH
MIC
E SE
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
1500
800
7.5
12
30
8
12
UNIT
V
V
V
A
A
A
A
W
℃
℃
Collector current -peak
Base current(DC)
Base current -peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
125
150
-65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2525A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA ;I
B
=0,L=25mH
800
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=1mA; I
C
=0
7.5
13.5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=8A; I
B
=1.6A
5.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=8A; I
B
=1.6A
V
CE
=rated ;V
BE
=0
T
j
=125℃
V
EB
=7.5V; I
C
=0
1.3
1.0
2.0
1.0
V
I
CES
Collector cut-off current
mA
I
EBO
Emitter cut-off current
mA
h
FE-1
h
FE-2
固电
DC current gain
DC current gain
导½
半
I
C
=0.1A ; V
CE
=5V
I
C
=8A ; V
CE
=5V
C
C
Collector capacitance
HA
INC
ES
NG
I
E
=0, V
CB
=10V;f=1MHz
MIC
E
OR
UCT
ND
O
6
13
26
5
7
10
145
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2525A
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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