NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
BYV44 series
SYMBOL
QUICK REFERENCE DATA
V
R
= 300 V/ 400 V/ 500 V
a1
1
k 2
a2
3
V
F
≤
1.12 V
I
O(AV)
= 30 A
t
rr
≤
60 ns
SOT78 (TO220AB)
GENERAL DESCRIPTION
Dual, common cathode, ultra-fast,
epitaxial rectifier diodes intended
for use as output rectifiers in high
frequency switched mode power
supplies.
The BYV44 series is supplied in the
conventional
leaded
SOT78
(TO220AB) package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
anode 2
cathode
tab
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
PARAMETER
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current
(both diodes conducting)
1
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode.
Storage temperature
Operating junction temperature
CONDITIONS
BYV44
T
mb
≤
136˚C
square wave;
δ
= 0.5;
T
mb
≤
94 ˚C
t = 25
µs; δ
= 0.5;
T
mb
≤
94 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
RRM(max)
-
-
-
-
-
-
-
-40
-
MIN.
-300
300
300
300
MAX.
-400
400
400
400
30
30
150
160
150
150
-500
500
500
500
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
per diode
both diodes conducting
in free air.
MIN.
-
-
-
TYP.
-
-
60
MAX.
2.4
1.4
-
UNIT
K/W
K/W
K/W
1
Neglecting switching and reverse current losses.
For output currents in excess of 20 A, the cathode connection should be made to the metal mounting tab.
October 1998
1
Rev 1.400
NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
Q
s
t
rr
I
rrm
V
fr
PARAMETER
Forward voltage
Reverse current
Reverse recovery charge
Reverse recovery time
Peak reverse recovery current
Forward recovery voltage
CONDITIONS
I
F
= 15 A; T
j
= 150˚C
I
F
= 15 A
I
F
= 30 A
V
R
= V
RRM
V
R
= V
RRM
; T
j
= 100 ˚C
I
F
= 2 A to V
R
≥
30 V;
dI
F
/dt = 20 A/µs
I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs
I
F
= 10 A to V
R
≥
30 V;
dI
F
/dt = 50 A/µs; T
j
= 100˚C
I
F
= 10 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
-
BYV44 series
TYP.
0.95
1.08
1.15
10
0.3
40
50
4.2
2.5
MAX.
1.12
1.25
1.36
50
0.8
60
60
5.2
-
UNIT
V
V
V
µA
mA
nC
ns
A
V
I
dI
F
dt
F
30
25
PF / W
Vo = 0.8900 V
Rs = 0.0137 Ohms
BYV44
Tmb(max) / C
88
D = 1.0
90
0.5
102
114
t
p
t
p
T
t
t
rr
time
20
15
10
0.2
0.1
Q
I
R
I
s
10%
100%
5
I
D=
126
138
T
rrm
0
0
5
10
15
IF(AV) / A
20
150
25
Fig.1. Definition of t
rr
, Q
s
and I
rrm
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square wave where I
F(AV)
=I
F(RMS)
x
√
D.
PF / W
Vo = 0.89
Rs = 0.0137
I
F
20
BYV44
Tmb(max) / C
102
a = 1.57
1.9
2.2
114
15
4
10
2.8
time
VF
V
VF
time
126
5
138
fr
0
0
5
10
150
15
IF(AV) / A
Fig.2. Definition of V
fr
Fig.4. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
October 1998
2
Rev 1.400
NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
BYV44 series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100
1A
100
2A
10
Tj = 25 C
Tj = 100 C
1
1
10
dIF/dt (A/us)
100
10
1
1.0
10
-dIF/dt (A/us)
100
Fig.5. Maximum t
rr
at T
j
= 25˚C and 100˚C; per diode
Fig.8. Maximum Q
s
at T
j
= 25˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
Tj = 25 C
Tj = 100 C
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
10us
T
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV42E
10s
Fig.6. Maximum I
rrm
at T
j
= 25˚C and 100˚C; per
diode
Fig.9. Transient thermal impedance per diode
Z
th j-mb
= f(t
p
)
50
IF / A
Tj = 25 C
Tj = 150 C
BYV74
40
30
typ
20
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
October 1998
3
Rev 1.400
NXP
Semiconductors
Product specification
Dual rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYV44 series
4,5
max
10,3
max
3,7
2,8
5,9
min
1,3
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.400
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