IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DISCRETE SEMICONDUCTORS
DATA SHEET
BTA212X series D, E and F
Three quadrant triacs
guaranteed commutation
Product
specification
June 2003
NXP
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a full pack, plastic envelope
intended for use in motor control circuits
or with other highly inductive loads.
These
devices
balance
the
requirements
of
commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
BTA212X series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA212X-
BTA212X-
BTA212X-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
12
95
MAX.
-
800E
-
800
12
95
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
main terminal 2
gate
PIN CONFIGURATION
case
SYMBOL
T2
T1
case isolated
1 2 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
hs
≤
56 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-600
600
1
12
MAX.
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
95
105
45
100
2
5
0.5
150
125
A
A
A
2
s
A/µs
A
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 2003
1
Rev 3.000
NXP
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
C
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
BTA212X series D, E and F
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.0
5.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
BTA212X-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 17 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
-
-
-
-
-
-
-
-
-
0.25
-
MIN.
...D
5
5
5
15
25
25
15
MAX.
...E
10
10
10
25
30
30
25
1.6
1.5
-
0.5
...F
25
25
25
30
40
40
30
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
2
Device does not trigger in the T2-, G+ quadrant.
June 2003
2
Rev 3.000
NXP
Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
CONDITIONS
BTA212X-
V
DM
= 67% V
DRM(max)
;
T
j
= 110 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 125 ˚C;
I
T(RMS)
= 12 A;
dV
com
/dt = 10 V/µs; gate
open circuit
V
DM
= 400 V; T
j
= 125 ˚C;
I
T(RMS)
= 12 A;
dV
com
/dt = 0.1 V/µs; gate
open circuit
BTA212X series D, E and F
MIN.
...D
30
...E
60
...F
70
MAX.
-
UNIT
V/µs
dI
com
/dt
1.0
8.0
21
-
A/ms
dI
com
/dt
Critical rate of change of
commutating current
3.5
16
32
-
A/ms
June 2003
3
Rev 3.000
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