Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
BTA212B series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA212B-
BTA212B-
BTA212B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
12
95
MAX.
-
800E
800F
800
12
95
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2
1
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
≤
99 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-600
600
1
12
MAX.
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
95
105
45
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000
1
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
BTA212B series D, E and F
MIN.
-
-
-
TYP.
-
-
55
MAX.
1.5
2.0
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
BTA212B-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 17 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
;
T
j
= 125 ˚C
MIN.
TYP.
...D
...D
5
5
5
15
25
25
15
...D, E, F
MAX.
...E
10
10
10
25
30
30
25
1.6
1.5
-
0.5
...F
25
25
25
30
40
40
30
UNIT
-
-
-
-
-
-
-
-
-
0.25
-
1.0
2.2
3.3
6
6
9
3.8
1.3
0.7
0.4
0.1
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
CONDITIONS
BTA212B-
V
DM
= 67% V
DRM(max)
;
T
j
= 110 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 110 ˚C;
I
T(RMS)
= 12 A;
dV
com
/dt = 20V/µs; gate
open circuit
V
DM
= 400 V; T
j
= 110 ˚C;
I
T(RMS)
= 12 A;
dV
com
/dt = 0.1V/µs; gate
open circuit
...D
20
MIN.
...E
60
...F
70
TYP.
...D
30
-
V/µs
MAX.
UNIT
dI
com
/dt
1.8
3.5
5
3
-
A/ms
dI
com
/dt
5
16
19
100
-
A/ms
...D, E, F
t
gt
Gate controlled turn-on
time
I
TM
= 12 A; V
D
= V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
-
-
-
2
-
µs
2
Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212B series D, E and F
20
Ptot / W
Tmb(max) / C
95
= 180
15
IT(RMS) / A
BT138
15
1
120
90
60
99 C
102.5
10
110
5
10
30
5
117.5
0
0
5
IT(RMS) / A
10
125
15
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
IT(RMS) / A
1000
ITSM / A
25
20
dI
T
/dt limit
100
15
10
IT
T
10
10us
I TSM
time
5
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
80
T
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
99˚C.
VGT(Tj)
VGT(25 C)
100
1.6
1.4
1.2
1
Tj initial = 25 C max
60
40
0.8
20
0.6
0.4
-50
0
1
10
100
Number of cycles at 50Hz
1000
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
February 2000
3
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212B series D, E and F
IGT(Tj)
IGT(25°C)
3
T2+ G+
T2+ G-
T2- G-
40
IT / A
Tj = 125 C
Tj = 25 C
typ
max
2.5
30
Vo = 1.175 V
Rs = 0.0316 Ohms
2
1.5
20
1
10
0.5
0
-50
0
0
Tj/°C
50
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-mb (K/W)
3
2.5
2
1.5
1
1
unidirectional
bidirectional
0.1
P
D
tp
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
dIcom/dt (A/ms)
100
F TYPE
E TYPE
D TYPE
3
2.5
2
10
1.5
1
0.5
0
-50
1
0
50
Tj / C
100
150
20
40
60
80
Tj/˚C
100
120
140
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Minimum, critical rate of change of
commutating current dI
com
/dt versus junction
temperature, dV
com
/dt = 20V/µs.
February 2000
4
Rev 1.000
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
BTA212B series D, E and F
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
(x2)
2.54 (x2)
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
February 2000
5
Rev 1.000
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
