ECO-PAC 2
IGBT Module
Preliminary Data Sheet
S9
L9
N5
A5
A1
F3
G1
N9
R5
D5
C1
K13
X18
W14
H5
K10
K12
Maximum Ratings
1200
± 20
T
C
= 25°C
T
C
= 80°C
V
GE
= 15/0 V; R
G
= 89
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
= 15/0 V; R
G
= 89
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
6
4.1
9.6
V
CES
10
40
V
V
A
A
A
µs
W
TM
PSII 6/12*
I
C25
=6A
V
CES
= 1200 V
V
CE(sat)typ.
= 3.9 V
PSII 6/12*
*NTC optional
IGBT
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
Conditions
T
VJ
= 25°C to 150°C
Features
•
•
•
•
•
•
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
3.9
4.6
3
0.5
100
30
20
290
90
0.4
0.2
205
11
6.2
4.6
5
0.1
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
3.1 K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 4 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.1 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
CE
= 960 V;
V
GE
= 0 V; T
VJ
= 25°C
V
GE
= 0 V; T
VJ
= 125°C
NPT IGBT’s
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plat
e
UL registered, E 148688
Applications
AC drives
power supplies with power factor
correction
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 4 A
V
GE
= 15/0 V; R
G
= 89
Ω
Advantages
•
•
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 960 V; V
GE
= 15 V; I
C
= 2 A
(per IGBT)
(per IGBT) with heatsink compound
Caution:
These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 6/12
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
12
8
A
A
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
I
F
= 4 A;
T
VJ
= 25°C
T
VJ
= 125°C
Characteristic Values
min. t y p . max.
2.4
2.0
tbd
tbd
7.6
2.5
V
V
A
ns
3.8 K/W
K/W
I
F
= ... A; di
F
/dt = ... A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
(per diode)
(per diode) with heatsink compound
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Characteristic Values
min. typ.
max.
4.75
5.0
3375
5.25 kΩ
K
Component
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+125
3000
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Symbol
d
S
d
A
Weight
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
京公网安备 11010802033920号
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