ECO-PAC 2
TM
IGBT Module
Sixpack
Preliminary Data Sheet
S9
L9
N5
A5
A1
F3
G1
PSII 35/06
I
C25
= 31 A
V
CES
= 600 V
V
CE(sat)typ.
= 1.9 V
N9
R5
D5
C1
K13
X18
W14
H5
K10
K12
Maximum Ratings
600
± 20
V
V
A
A
A
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
Conditions
T
VJ
= 25°C to 150°C
PSII 35/06
Features
31
21
40
V
CES
10
100
•
V
GE
= ±15 V; R
G
= 47
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
V
CE
= 600 V; V
GE
= ±15 V; R
G
= 47
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
Conditions
•
µs
W
•
•
•
•
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
1.9
2.2
4.5
0.7
100
50
55
300
30
0.9
0.7
1100
65
2.5
2.4
6.5
0.6
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
pF
nC
1.3 K/W
K/W
NPT IGBT’s
- positive temperature coefficient of
saturation voltage
- fast switching
FRED diodes
- fast reverse recovery
- low forward voltage
Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plat
e
UL registered, E 148688
Applications
AC drives
power supplies with power factor
correction
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
Q
Gon
R
thJC
R
thJH
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 0.5 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
Advantages
V
CE
= 0 V; V
GE
= ± 20 V
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82
Ω
•
•
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300 V; V
GE
= 15 V; I
C
= 20 A
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
Caution:
These devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 35/06
Diodes
Symbol
I
F25
I
F80
Conditions
T
C
= 25°C
T
C
= 80°C
Maximum Ratings
35
22
A
A
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
I
F
= 20 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 15 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
V
R
= 300 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Characteristic Values
min.
typ. max.
1.9
1.4
13
90
4.6
2.1
V
V
A
ns
2.3 K/W
K/W
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
Component
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
I
ISOL
≤
1 mA; 50/60 Hz; t = 1 s
Mounting torque (M4)
Max. allowable acceleration
Conditions
Maximum Ratings
-40...+150
-40...+125
3600
1.5 - 2.0
14 - 18
50
°C
°C
V~
Nm
lb.in.
m/s
2
Symbol
d
S
d
A
Weight
Conditions
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
Characteristic Values
min. typ. max.
11.2
11.2
24
mm
mm
g
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 35/06
IGBT
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 35/06
IGBT
Transient thermal resistance junction to heatsink
10
(Z
thJH
is measured using 50 µm
thermal grease)
1
D=0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0.1
IGBT
Z
thJH
[K/W]
0.01
0.00001
0.0001
0.001
0.01
t (s)
0.1
1
10
0.001
100
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
PSII 35/06
Diode
40
A
I
F
30
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
2000
nC
1500
Q
r
1000
T
VJ
= 100°C
V
R
= 300V
40
A
30
I
RM
20
T
VJ
= 100°C
V
R
= 300V
20
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
10
500
10
0
0
1
V
F
2
V
0
100
A/µs 1000
-di
F
/dt
0
0
200
400
600 A/µs 1000
800
-di
F
/dt
Forward current I
F
versus V
F
Reverse recovery charge Q
r
versus -di
F
/dt
120
ns
T
VJ
= 100°C
V
R
= 300V
Peak reverse current I
RM
versus -di
F
/dt
20
V
FR
15
T
VJ
= 100°C
V
I
F
= 15A
2.0
1.6
V
FR
µs
1.2
1.5
K
f
t
rr
110
I
F
= 30A
I
F
= 15A
I
F
= 7.5A
t
fr
100
1.0
I
RM
10
t
fr
0.8
90
Q
r
0.5
80
5
0.4
15-06A
0.0
0
40
80
120 °C 160
T
VJ
70
0
200
400
600
-di
F
/dt
800
A/µs 1000
0
0
200
400
0.0
600 A/µs 1000
800
di
F
/dt
Dynamic parameters Q
r
, I
RM
versus T
VJ
Recovery time t
rr
versus -di
F
/dt
Peak forward voltage V
FR
and t
fr
versus di
F
/dt
(Z
thJH
is measured using 50 µm
thermal grease)
)
10
1
FRED
Z
thJH
[K/W]
D
D
D
D
D
D
D
D
=
=
=
=
=
=
=
=
0
0.
005
0.
01
0.
02
0.
05
0.
1
0.
2
0.
5
0.1
0.01
0.00001
0.0001
0.001
0.01
t(s)
0.1
1
10
0.001
100
Transient thermal resistance junction to heatsink
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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