IGBT Module
Short Circuit SOA Capability
Square RBSOA
Preliminary Data Sheet
S15
R15
A15
A7
A9
D1
A1
U1
V1
G15
V12
V13
K1
G1
V3
PSII 100/12*
I
C80
=
V
CES
=
V
CE(sat)typ.
=
ECO-TOP
TM
1
90 A
1200 V
2.8 V
N15
V9
V10
Q1
N1
V6
IGBTs
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
R
thJC
R
thJH
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
Conditions
Maximum Ratings
1200
± 20
T
VJ
= 25°C to 150°C
V
V
T
C
= 25°C
T
C
= 80°C
130
90
A
A
V
GE
= ±15 V; R
G
= 15
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
150
V
CES
A
V
CE
= V
CES
; V
GE
= ±15 V; R
G
= 15
Ω;
T
VJ
= 125°C
non-repetitive
T
C
= 25°C
10
µs
W
568
typical picture, for pin
configuration see outline
drawing
*NTC optional
Features
•
Conditions
(T
VJ
Characteristic Values
= 25°C, unless otherwise specified)
min.
typ. max.
2.8
3.2
3.4
I
C
= 125 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 3 mA; V
GE
= V
CE
V
CE
= V
CES
;
V
V
V
•
•
•
•
•
•
•
•
•
•
•
•
•
•
4.5
6.5
Package with DCB ceramic
base plate
Isolation voltage 3000 V
∼
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
UL Release applied
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
5
16
mA
mA
Applications
V
CE
= 0 V; V
GE
= ± 20 V
320
nA
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 75 A
V
GE
= 15/0 V; R
G
= 15
Ω
100
50
650
50
12.1
10.5
5.5
0.44
ns
ns
ns
ns
mJ
mJ
AC and DC motor control
AC servo and robot drives
Power supplies
Welding inverters
Advantages
Easy to mount with four screws
Space and weight savings
Improved temperature and
power cycling capability
High power density
Small and light weight
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
nF
0.22 K/W
K/W
Caution:
These Devices are sensitive
to electrostatic discharge. Users should
observe proper ESD handling precautions.
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Reverse diodes (FRED)
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 75 A; T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 75 A; di
F
/dt = 750 A/µs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
with heatsink compound (0.42 K/m.K; 50 µm)
Maximum Ratings
150
100
A
A
Characteristic Values
min.
typ. max.
2.2
1.6
79
220
0.9
2.5
V
V
A
ns
Temperature Sensor NTC
Symbol
R
25
B
25/50
Conditions
T = 25°C
Module
Symbol
T
VJ
T
stg
V
ISOL
M
d
a
Symbol
d
S
d
A
Weight
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
0.45 K/W
K/W
Characteristic Values
min. typ. max.
4.75
5.0
3375
5.25 kΩ
K
Conditions
Maximum Ratings
-40...+125
-40...+150
3000
°C
°C
I
ISOL
≤
1 mA; 50/60 Hz
Mounting torque (M5)
V~
Max. allowable acceleration
3
26
50
Nm
lb.in.
m/s
2
Conditions
Characteristic Values
min. typ. max.
11.2
11.2
Creepage distance on surface
(Pin to heatsink)
Strike distance in air
(Pin to heatsink)
mm
mm
g
86
Package style and outline
Dimensions in mm (1mm = 0.0394“)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
175
A
150
I
C
125
T
J
= 25°C
V
GE
=17V
15V
13V
11V
175
A
150
I
C
125
100
75
T
J
= 125°C
V
GE
=17V
15V
13V
11V
100
75
50
25
0
0,0
9V
50
25
9V
0,5
Fig. 1 Typ. output characteristics
150
125
A
I
C
V
CE
= 20V
T
J
= 25°C
100
75
50
25
0
5
6
Fig. 3 Typ. transfer characteristics
20
V
V
GE
15
V
CE
= 600V
I
C
= 75A
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
121T120
1,0
1,5
2,0
2,5
3,0
V
0
121T120
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
V
CE
V
CE
Fig. 2 Typ. output characteristics
300
A
250
200
150
100
T
J
= 125°C
I
F
T
J
= 25°C
50
121T120
0
121T120
7
8
9
10
11
V
0,5
1,0
1,5
2,0
2,5
3,0
V
3,5
V
GE
V
F
Fig. 4 Typ. forward characteristics of
free wheeling diode
300
ns
t
rr
120
A
I
RM
t
rr
80
200
10
40
5
I
RM
T
J
= 125°C
V
R
= 600V
I
F
= 75A
100
0
121T120
0
121T120
0
100
200
300
Q
G
400
nC
0
200
400
600
800
A/µs
-di/dt
1000
0
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
40
mJ
E
on
E
on
t
d(on)
t
r
160
ns
120
t
20
mJ
E
off
15
E
off
t
d(off)
800
ns
600
t
400
30
20
80
10
V
CE
= 600V
V
GE
= ±15V
10
V
CE
= 600V
V
GE
= ±15V
40
R
G
= 15Ω
T
J
= 125°C
121T120
5
R
G
= 15Ω
200
T
J
= 125°C
121T120
0
0
Fig. 7 Typ. turn on energy and switching
times versus collector current
25
mJ
20
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125°C
15
10
5
0
0
8
Fig. 9
200
A
160
I
CM
t
e
e
h r
s e
ta nd
a u
d l
e til
t
v s
n
ti t
e
a c
t
n u opm
te od el
r ev
p d
50
100
150
A
0
50
100
I
C
I
C
t
d(on)
E
on
200
ns
160
120
80
40
0
0
0
t
f
150 A
0
Fig. 8 Typ. turn off energy and switching
times versus collector current
2000
ns
1600
t
1200
800
400
t
f
0
25
20
15
10
mJ
t
E
off
V
CE
= 600V
V
GE
= ±15V
I
C
= 75A
T
J
= 125°C
t
d(off)
E
off
t
r
5
0
121T120
121T120
16
24
32
40
48
Ω
56
0
8
16
24
32
40
48
Ω
56
R
G
R
G
Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
0,1
Z
thJC
120
80
40
0
121T120
0,01
R
G
= 15Ω
T
J
= 125°C
V
CEK
< V
CES
diode
IGBT
0,001
0,0001
single pulse
VID...125-12P1
0
200
400
600
800 1000 1200
V
V
CE
0,00001
0,00001 0,0001
0,001
0,01
t
0,1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
stm32/stm8
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