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PT501C

产品描述Photo Transistor, 800nm,
产品类别光电子/LED    光电   
文件大小62KB,共4页
制造商SHARP
官网地址http://sharp-world.com/products/device/
下载文档 详细参数 选型对比 全文预览

PT501C概述

Photo Transistor, 800nm,

PT501C规格参数

参数名称属性值
厂商名称SHARP
Reach Compliance Codeunknown
Coll-Emtr Bkdn Voltage-Min45 V
配置SINGLE
最大暗电源100 nA
红外线范围YES
标称光电流2.5 mA
功能数量1
最高工作温度125 °C
最低工作温度-25 °C
光电设备类型PHOTO TRANSISTOR
峰值波长800 nm
形状ROUND
尺寸4.7 mm

文档预览

下载PDF文档
PT501/PT510
PT501/PT510
s
Features
1. Narrow acceptance (
∆θ
: TYP. ± 6˚ )
2. TO -18 type standard package
3. With base terminal :
PT510
TO-18 Type Narrow
Acceptance Phototransistor
s
Outline Dimensions
φ
4.7
±
0.1
Glass
lens
6.8
MAX.
4.5
6.8
MAX.
4.5
PT501
( Unit : mm )
φ
4.7
±
0.1
Glass
lens
PT510
s
Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
φ
0.45
2.5
20.0
±
1.0
13
φ
0.45
2.5
1.
0
0
3
2
1.
φ
2.5
1
2 1
1.0
45˚
φ
5.7
MAX.
1
45˚
1.0
φ
5.7
MAX.
1
1 Collector
2 Emitter
2
2
3
1 Collector (Case )
2 Base
3 Emitter
s
Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-base voltage
Emitter-base voltage
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
Symbol
V
CEO
V
ECO
V
CBO
V
EBO
P
C
T
opr
T
stg
T
sol
PT501
45
6
-
-
75
- 25 to + 125
- 55 to + 150
260
PT510
35
6
35
6
75
- 25 to + 125
- 55 to + 150
260
( Ta = 25˚C )
Unit
V
V
V
V
mW
˚C
˚C
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
s
Electro-optical Characteristics
Parameter
*2
( Ta = 25˚C )
Symbol
I
C
Conditions
V
CE
= 5V, E
e
= 10mW/cm
2
MIN.
2.5
-
-
-
-
-
TYP.
PT501
PT510
2 x 10
- 9
0.2
800
PT501
PT510
PT501
PT510
MAX.
10
20
-
10
- 7
-
-
10
2
10
3
-
-
Unit
mA
A
V
nm
µ
s
µ
s
Collector current
Collector dark current
*2
Collector-emitter saturation voltage
Peak sensitivity wavelength
Response
time
Rise time
Fall time
V
CE
= 30V, E
e
= 0
I
CEO
V
CE ( sat )
I
C
= 1mA, E
e
= 10mW/cm
2
λ
P
t
r
t
f
V
CE
= 2V, I
C
= 2mA,
R
L
= 100Ω (
PT501
: 1k
)
*2 E
e
: Irradiance by CIE standard light source A ( tungsten lamp )
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”

PT501C相似产品对比

PT501C PT501A PT510 PT501B
描述 Photo Transistor, 800nm, photo trans clr len 800nm TO-18 photo trans clr len 800nm TO-18 Photo Transistor, 800nm,
厂商名称 SHARP SHARP - SHARP
Reach Compliance Code unknown unknown - unknown
Coll-Emtr Bkdn Voltage-Min 45 V 45 V - 45 V
配置 SINGLE SINGLE - SINGLE
最大暗电源 100 nA 100 nA - 100 nA
红外线范围 YES YES - YES
标称光电流 2.5 mA 20 mA - 10 mA
功能数量 1 1 - 1
最高工作温度 125 °C 125 °C - 125 °C
最低工作温度 -25 °C -25 °C - -25 °C
光电设备类型 PHOTO TRANSISTOR PHOTO TRANSISTOR - PHOTO TRANSISTOR
峰值波长 800 nm 800 nm - 800 nm
形状 ROUND ROUND - ROUND
尺寸 4.7 mm 4.7 mm - 4.7 mm

 
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