Subassembly
Single Phase AC Controller
Subassemblies
Preliminary Data Sheet
V
RSM
V
DSM
(V)
900
1300
1500
1700
1900
V
RRM
V
DRM
(V)
800
1200
1400
1600
1800
Type
PSW1C142
I
RMS
= 130 A
V
RRM
= 800-1800 V
PSW1C 142/08
PSW1C 142/12
PSW1C 142/14
PSW1C 142/16
PSW1C 142/18
Symbol
I
RMS
I
TRMS
I
TAVM
I
TSM
Test Conditions
Maximum Ratings
130
90
58
1150
1230
1000
1070
6600
6280
5000
4750
150
A
A
A
A
A
A
A
A²s
A²s
A²s
A²s
A/µs
Features
T
C
= 85 °C; 50-400 Hz
(per single controller)
T
C
= 85 °C;
T
VJ
= 45 °C
V
R
= 0
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
V
R
= 0
180° sine, per thyristor
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
•
•
•
Planar glass passivated chips
Low forward voltage drop
Leads suitable for PC board
soldering
T
VJ
= 125 °C t = 10 ms (50 Hz), sine
Applications
∫
i dt
2
•
Solid state relays
Advantages
T
VJ
= 125 °C t = 10 ms (50 Hz), sine
(di/dt)
cr
T
VJ
= 125 °C repetitive, I
T
= 60 A
f=50Hz, t
P
=200µs
V
D
=2/3V
DRM
I
G
=0.45 A
non repetitive,I
T
= I
TAVM
•
•
•
•
Space and weight savings
Improved temperature and power
cycling capability
High power density
Small and light weight
500
1000
≤
≤
10
5
0.5
10
-40... + 150
150
A/µs
V/µs
W
W
W
V
°C
°C
°C
g
di
G
/dt=0.45A/µs
(dv/dt)
cr
P
GM
P
GAVM
V
RGM
T
VJ
T
VJM
T
stg
Weight
T
VJ
= 125 °C V
D
=2/3V
DRM
R
GK
=
∞,
method 1 (linear voltage rise)
T
VJ
= 125 °C t
P
=30µs
I
T
=I
TAVM
t
P
=300µs
typ.
-40... + 125
8
Data according to IEC 60747 refer to a single thyristor unless otherwise stated
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Subassembly
Symbol
I
D,
I
R
V
T
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
R
thJC
a
Test Conditions
I
T
= 200 A,
T
VJ
= 25 °C
Characteristic Value
≤
5
0.85
5.2
≤
≤
≤
≤
≤
≤
≤
≤
≤
1.5
1.6
100
200
0.2
10
450
200
2
0.7
0.35
50
mA
V
V
m
Ω
V
V
mA
mA
V
mA
mA
mA
µs
K/W
K/W
m/s²
≤
1.75
T
VJ
= 125°C, V
R
= V
RRM
, V
D
=V
DRM
For power-loss calculations only
V
D
=6V
V
D
=6V
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
=-40°C
T
VJ
= 25°C
T
VJ
=-40°C
V
D
=2/3V
DRM
V
D
=2/3V
DRM
T
VJ
= 25°C, t
P
=10µs
I
G
=0.45A, di
G
/dt=0.45A/µs
T
VJ
= 25°C, V
D
=6V, R
GK
=
∞
T
VJ
= 25°C, V
D
=1/2V
DRM
I
G
=0.45A, di
G
/dt=0.45A/µs
per thyristor; DC
per module
Max. allowable acceleration
Package style and outline
Dimensions in mm (1mm = 0.0394“)
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
NXP MCU
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