Thyristor Modules
Thyristor/Diode Modules
Preliminary Data Sheet
PSKT 44
PSKH 44
I
TRMS
I
TAVM
V
RRM
= 2 x 80 A
= 2 x 51 A
= 800-1800 V
V
RSM
V
RRM
V
DSM
V
DRM
V
900
1300
1500
1700
1900
Type
Version 1
PSKT 44/08io1
PSKT 44/12io1
PSKT 44/14io1
PSKT 44/16io1
PSKT 44/18io1
V
800
1200
1400
1600
1800
Version 8
PSKT
PSKT
PSKT
PSKT
PSKT
44/08io8
44/12io8
44/14io8
44/16io8
44/18io8
PSKH 44/08io8
PSKH 44/12io8
PSKH 44/14io8
PSKH 44/16io8
PSKH 44/18io8
TO-240 AA
1
2
3
6
7
4
5
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 83°C; 180° sine
T
C
= 85°C; 180° sine
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
80
51
49
1150
1230
1000
1070
6600
6280
5000
4750
150
500
1000
10
5
0.5
10
-40...+125
125
-40...+125
A
A
A
A
A
A
A
A
2
s
A
2
s
As
A
2
s
2
3
6 7 1
5 4 2
PSKT
Version
1
3
6 1
5 2
PSKT
Version
8
3
1
5 2
∫
i
2
dt
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
PSKH
Version
Features
8
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 150 A
f =50 Hz, t
P
=200 µs
V
D
= 2/3 V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
;
V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
P
= 30 µs
t
P
= 300 µs
A/µs
A/µs
V/µs
W
W
W
V
°C
°C
°C
V~
V~
●
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
●
●
●
●
●
International standard package,
JEDEC TO-240 AA
Direct copper bonded Al
2
O
3
-ceramic
base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 148688
Gate-cathode twin pins for version 1
Applications
●
●
●
50/60 Hz, RMS
I
ISOL
≤
1 mA
t = 1 min
t=1s
3000
3600
DC motor control
Softstart AC motor controller
Light, heat and temperature control
Mounting torque (M5)
Terminal connection torque (M5)
Typical including screws
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
90
g
Advantages
●
●
●
●
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Space and weight savings
Simple mounting with two screws
Improved temperature and power
cycling capability
Reduced protection circuits
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Symbol
I
RRM
, I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Test Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
, I
F
= 200 A; T
VJ
= 25°C
Characteristic Values
5
1.75
0.85
5.3
1.5
1.6
100
200
0.2
10
450
200
2
typ.
150
90
11
0.53
0.265
0.73
0.365
12.7
9.6
50
mA
V
V
m
Ω
V
V
mA
mA
V
mA
mA
mA
µs
µs
µC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
t
gd
V
G
10
1: I
GT
, T
VJ
= 125°C
V
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
For power-loss calculations only (T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
T
VJ
T
VJ
T
VJ
=
=
=
=
25°C
-40°C
25°C
-40°C
1
1
2
3
5
4
6
V
D
= 2/3 V
DRM
T
VJ
= 25°C; t
P
= 10 µs, V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
T
VJ
= T
VJM
; I
T
= 120 A, t
P
= 200 µs; -di/dt = 10 A/µs
V
R
= 100 V; dv/dt = 20 V/µs; V
D
= 2/3 V
DRM
T
VJ
= T
VJM
; I
T
, I
F
= 50 A, -di/dt = 0.64 A/µs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
4: P
GAV
= 0.5 W
I
GD
, T
VJ
= 125°C
0.1
10
0
10
1
10
2
5: P
GM
=
5W
6: P
GM
= 10 W
10
3
I
G
mA
10
4
Fig. 1 Gate trigger characteristics
1000
T
VJ
= 25°C
µs
typ.
other values
see Fig. 8/9
100
Limit
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
10
1
10
100
mA
I
G
1000
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
PSKT Version 1
PSKT Version 8
PSKH Version 8
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
Circuit
B6
3 x PSKT 44 or
3 x PSKH 44
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Circuit
W3
3 x PSKT 44 or
3 x PSKH 44
PSKT 44 or
PSKH 44
Z
thJC
(t)
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJC
(K/W)
0.53
0.55
0.58
0.6
0.62
Constants for Z
thJC
calculation:
i
1
2
3
R
thi
(K/W)
0.015
0.026
0.489
t
i
(s)
0.0035
0.02
0.195
PSKT 44 or
PSKH 44
Z
thJK
(t)
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180°
120°
60°
30°
R
thJK
(K/W)
0.73
0.75
0.78
0.8
0.82
Constants for Z
thJK
calculation:
i
1
2
3
4
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
R
thi
(K/W)
0.015
0.026
0.489
0.2
t
i
(s)
0.0035
0.02
0.195
0.68
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
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