电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

PSEI2X61-12

产品描述Fast Recovery Epitaxial Diode (FRED)
文件大小133KB,共2页
制造商Powersem GmbH
官网地址https://www.powersem.net/index.php
下载文档 全文预览

PSEI2X61-12概述

Fast Recovery Epitaxial Diode (FRED)

文档预览

下载PDF文档
ECO-PAC
TM
1
Fast Recovery
Epitaxial Diode (FRED)
Preliminary Data Sheet
V
RSM
V
RRM
Type
(V)
(V)
1200 1200 PSEI 2x61/12
PSEI 2x61
I
FAVM
V
RRM
t
rr
= 2x 52 A
= 1200 V
= 40 ns
Symbol
I
FRMS
I
FAVM
*
I
FRM
I
FSM
Test Conditions
T
VJ
= T
VJM
T
C
= 50 °C, rectangular, d=0.5
T
VJ
= 45 °C
V
R
= 0
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
V
R
= 0
Maximum Ratings
100
52
450
500
400
440
1000
1050
800
810
A
A
A
A
A
A
A
A²s
A²s
A²s
A²s
°C
°C
°C
V
V
Nm
lb.in.
g
Features
t
P
<10µs;
rep.rating, pulse widthlimited by
T
VJM
700
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
2 independent FRED in 1 package
Isolation voltage 3000 V
Planar glass passivated chips
Low forward voltage drop
T
VJ
= 125 °C t = 10 ms (50 Hz), sine
Leads suitable for PC board
soldering
Very short recovery time
Soft recovery behaviour
UL registered, E 148688
i
2
dt
T
VJ
= 125 °C t = 10 ms (50 Hz), sine
Applications
T
VJ
T
VJM
T
stg
V
ISOL
M
d
-40... + 150
150
-40... + 150
50/60 Hz, RMS t = 1 min
I
ISOL
1 mA
Mounting torque
typ.
t=1s
(M4)
2500
3000
1.5 - 1.8
14 - 16
16
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C, V
R
=V
RRM
T
VJ
= 25°C, V
R
=0.8
.
V
RRM
T
VJ
= 125°C, V
R
=0.8
.
V
RRM
I
F
= 60 A,
T
VJ
= 150 °C
T
VJ
= 25 °C
Characteristic Value
max.
max.
max.
max.
max.
2.2
0.5
14
2.15
2.50
1.65
8.3
0.7
0.05
typ.
typ.
32
40
11.2
11.2
50
mA
mA
mA
V
V
V
m
K/W
K/W
A
ns
mm
mm
m/s²
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
V
F
V
TO
r
T
R
thJC
R
thCH
I
RM
t
rr
d
s
d
A
a
For power-loss calculations only
per diode; max.
per diode; typ.
I
F
=60A; -di
F
/dt=480A/µs; V
R
=540V
L≤0.05 mH; T
VJ
= 100°C
I
F
=1A; -di
F
/dt=200A/µs; V
R
=30V;
T
VJ
= 25°C
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Low noise switching
Small and light weight
Data according to IEC 60747 refer to a single diode
unless otherwise stated
*I
FAVM
rating includes blocking losses at T
VJM
;
V
R
=0.8 V
RRM
; duty cycle d=0.5
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1827  1278  728  2059  944  37  26  15  42  20 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved