BUZ 80
SIPMOS
®
Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
800 V
I
D
3.1 A
R
DS(on
)
4
Ω
Package
Ordering Code
BUZ 80
TO-220 AB
C67078-S1309-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
T
C
= 28 °C
I
D
A
3.1
Pulsed drain current
T
C
= 25 °C
I
Dpuls
12.5
I
AR
E
AR
E
AS
Avalanche current,limited by
T
jmax
Avalanche energy,periodic limited by
T
jmax
Avalanche energy, single pulse
I
D
= 3.1 A,
V
DD
= 50 V,
R
GS
= 25
Ω
L
= 62.4 mH,
T
j
= 25 °C
3.1
8
mJ
320
V
GS
P
tot
Gate source voltage
Power dissipation
T
C
= 25 °C
±
20
100
V
W
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
T
j
T
stg
R
thJC
R
thJA
-55 ... + 150
-55 ... + 150
°C
≤
1.25
75
E
55 / 150 / 56
K/W
Semiconductor Group
1
09/96
BUZ 80
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ.
max.
Unit
Static Characteristics
Drain- source breakdown voltage
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 °C
V
(BR)DSS
V
800
-
-
Gate threshold voltage
V
GS=
V
DS,
I
D
= 1 mA
V
GS(th)
2.1
I
DSS
3
4
µA
Zero gate voltage drain current
V
DS
= 800 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 800 V,
V
GS
= 0 V,
T
j
= 125 °C
-
-
I
GSS
0.1
10
1
100
nA
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0 V
-
R
DS(on)
10
100
Drain-Source on-resistance
V
GS
= 10 V,
I
D
= 2 A
Ω
-
3.5
4
Semiconductor Group
2
09/96
BUZ 80
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Dynamic Characteristics
Values
typ.
max.
Unit
Transconductance
V
DS
≥
2
*
I
D *
R
DS(on)max,
I
D
= 2 A
g
fs
S
1
3.6
-
pF
-
900
1350
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
iss
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
C
oss
-
C
rss
95
140
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
-
t
d(on)
50
75
ns
Turn-on delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
-
t
r
15
25
Rise time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
-
t
d(off)
65
85
Turn-off delay time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
-
t
f
200
270
Fall time
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A
R
GS
= 50
Ω
-
65
85
Semiconductor Group
3
09/96
BUZ 80
Electrical Characteristics,
at
T
j
= 25°C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Values
typ.
max.
Unit
Inverse diode continuous forward current
T
C
= 25 °C
I
S
A
-
-
3.1
Inverse diode direct current,pulsed
T
C
= 25 °C
I
SM
-
V
SD
-
12.5
V
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 6.2 A
-
t
rr
1
1.3
ns
Reverse recovery time
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/µs
-
Q
rr
370
-
µC
Reverse recovery charge
V
R
= 100 V,
I
F=
l
S,
d
i
F
/d
t
= 100 A/µs
-
2.5
-
Semiconductor Group
4
09/96
BUZ 80
Power dissipation
P
tot
=
ƒ
(T
C
)
Drain current
I
D
=
ƒ
(T
C
)
parameter:
V
GS
≥
10 V
3.2
110
W
P
tot
90
80
70
60
I
D
A
2.4
2.0
1.6
50
40
30
20
0.4
10
0
0
20
40
60
80
100
120
°C
160
0.0
0
20
40
60
80
100
120
°C
160
1.2
0.8
T
C
T
C
Safe operating area
I
D
=
ƒ
(V
DS
)
parameter:
D
= 0.01,
T
C
= 25°C
10
2
Transient thermal impedance
Z
th JC
=
ƒ
(t
p
)
parameter:
D = t
p
/
T
10
1
K/W
A
I
D
t
= 18.0µs
p
Z
thJC
10
1
10
0
10
-1
100 µs
D = 0.50
/
I
D
1 ms
10
-2
0.20
0.10
0.05
DS
(on
)
=
V
10
0
DS
10 ms
R
10
-3
0.02
single pulse
0.01
10
-1
0
10
10
1
10
2
DC
3
V 10
10
-4
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
V
DS
t
p
Semiconductor Group
5
09/96
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