BZT52C2V4-BZT52C51
Surface Mount Zener Diode
Voltage range 2.7-51 Volts
500m Watts Power Dissipation
SOD-123
FEATURES
Planar die construction
500 mW power dissipation on ceramic PCB
Ideally suited for automated assembly
processes
General purpose, medium current
0.053(1.35)
Max.
0.022(0.55)
Typ. Min.
MECHANICAL DATA
Case: SOD-123, plastic
Terminals: Matte-Sn plated
Polarity: Cathode band
Marking: Date Code and Type Code or
Date Code only
Type Code: See table on Page 2
Weight: 0.01 grams (approx.)
0.006(0.15)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.112(2.85)
0.100(2.55)
0.010(0.25)
Min.
0.067(1.70)
0.55(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Pb-free, RoHS compliant.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Parameter
Forward Voltage
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
@ IF = 10mA
Symbol
V
F
Pd
R
JA
T
J
, T
STG
Value
0.9
500
305
-65 to + 150
Units
V
mW
°C/W
°C
2.
Notes: 1.
Device mounted on ceramic PCB, 7.6mm x 9.4mm x 0.87mm with pad areas 25mm
2. Tested with pulses; period = 5ms, pulse width = 300us.
3. Parts are provided with date code, and type number identifications appear on reel only.
4. f = 1KHz.
8/26/2004 Rev.1.01
www.SiliconStandard.com
1 of 3
BZT52C2V4-BZT52C51
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
Device
(Note 1)
BZT52C2V4
BZT52C2V7
BZT52C3V0
BZT52C3V3
BZT52C3V6
BZT52C3V9
BZT52C4V3
BZT52C4V7
BZT52C5V1
BZT52C5V6
BZT52C6V2
BZT52C6V8
BZT52C7V5
BZT52C8V2
BZT52C9V1
BZT52C10
BZT52C11
BZT52C12
BZT52C13
BZT52C15
BZT52C16
BZT52C18
BZT52C20
BZT52C22
BZT52C24
BZT52C27
BZT52C30
BZT52C33
BZT52C36
BZT52C39
BZT52C43
BZT52C47
BZT52C51
Zener Voltage Range (Note 2)
Device
V
z
@ I
zt
Marking
I
ZT
Code
(Note 3) Nom (V) Min (V) Max (V) mA
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
WY
WZ
WX1
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
2.0
2.0
5.0
5.0
5.0
Maximum Zener
Impedance (Note 4)
Z
ZK @
I
ZK
Z
ZT @
I
ZT
Ohms
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
100
100
100
Ohms
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
700
750
750
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
Maximum Reverse
Current
I
R
VR
uA
V
50
20
10
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
32
35
38
Typical Temerature
Coefficient
Test
@ I
ZTC
Current
mV / °C
Min
Max
mA
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-3.5
-2.7
-2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
21.4
24.4
27.4
30.4
33.4
10.0
10.0
10.0
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.1
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
25.3
29.4
33.4
37.4
41.2
12.0
12.0
12.0
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
5
5
5
Notes: 1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. Parts are provided with date code, and type number identifications appear on reel only.
4. f = 1KHz.
8/26/2004 Rev.1.01
www.SiliconStandard.com
2 of 3
BZT52C2V4-BZT52C51
RATINGS AND CHARACTERISTIC CURVES
FIG.1- POWER DISSIPATION VS
AMBIENT TEMPERATURE
0.6
P
D
, POWER DISSIPATION (W)
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75
100
O
125
150
V
F
, AMBIENT TEMPERATURE ( C)
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
8/26/2004 Rev.1.01
www.SiliconStandard.com
3 of 3
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
