Three Phase
Rectifier Bridge
Preliminary Data Sheet
V
RSM
V
DSM
(V)
800
1200
1400
1600
1800
V
RRM
V
DRM
(V)
800
1200
1400
1600
1800
Type
PSD 83
I
dAV
V
RRM
= 100 A
= 800-1800V
PSD
PSD
PSD
PSD
PSD
83/08
83/12
83/14
83/16
83/18
Symbol
I
dAVM
I
FSM
Test Conditions
T
C
= 100 °C,
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
T
VJ
= 45 °C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
(per module)
Maximum Ratings
100
1200
1300
1000
1100
7200
7020
5000
5020
A
A
A
A
A
A²s
A²s
A²s
A²s
°C
°C
°C
V
∼
Nm
Nm
g
V
∼
Features
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
∫
i
2
dt
•
•
•
•
•
•
Package with screw terminals
Isolation voltage 3000 V
∼
Planar glass passivated chips
Blocking voltage up to 1800 V
Low forward voltage drop
UL registered E 148688
Applications
T
VJ
T
VJM
T
stg
V
ISOL
M
d
-40... + 150
150
-40... + 150
50/60 Hz, RMS t = 1 min
I
ISOL
≤
1 mA
Mounting torque
t=1s
(M5)
2500
3000
5
5
160
•
•
•
•
Supplies for DC power equipment
Input rectifier for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Weight
Terminal connection torque (M5)
typ.
•
•
•
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Symbol
I
R
V
F
V
TO
r
T
R
thJC
R
thJK
d
s
d
A
a
Test Conditions
V
R
= V
RRM,
T
VJ
= 25°C
V
R
= V
RRM,
T
VJ
= T
VJM
I
F
= 100 A,
T
VJ
= 25 °C
For power-loss calculations only
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
Characteristic Value
≤
≤
≤
0.3
5
1.35
0.8
5
0.58
0.097
0.825
0.138
10.0
9.4
50
mA
mA
V
V
m
Ω
K/W
K/W
K/W
K/W
mm
mm
m/s²
Package style and outline
Dimensions in mm (1mm = 0.0394“)
Data according to IEC 60747 refer to a single diode unless otherwise stated
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
200
IF(OV)
------
IFSM
IFSM (A)
TVJ=45°C
TVJ=150°C
500
550
150
1.6
1.4
1.2
100
1
0 VRRM
50
0.8
T = 150°C
vj
0.5
1.0
1/2 VRRM
T = 25°C
vj
1.5
2.0
V
F
(V)
0.6
0.4
0
10
1 VRRM
0
1
2
10 t[ms] 10
3
10
Forward current versus
voltage drop per diode
Surge overload current
per diode I
FSM
: Crest value
t: duration
1
Z thJK
[A]
120
100
IdAV
DC
sin.180°
rec.120°
rec.60°
rec.30°
K/W
0.8
0.6
Z thJC
80
60
40
0.4
0.2
20
0
Z th
50
100
150
TC(°C)
200
0.01
0.1
t[s]
1
10
Maximum forward current
at case temperature
Transient thermal impedance per diode
POWERSEM GmbH, Walpersdorfer Str. 53
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
NXP MCU
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