2N/PN/SST4391 Series
Vishay Siliconix
N-Channel JFETs
2N4391
2N4392
2N4393
PRODUCT SUMMARY
Part Number
2N/PN/SST4391
2N/PN/SST4392
2N/PN/SST4393
PN4391
PN4392
PN4393
SST4391
SST4392
SST4393
V
GS(off)
(V)
–4
to –10
–2 to –5
–0.5 to –3
r
DS(on)
Max (W)
30
60
100
I
D(off)
Typ (pA)
5
5
5
t
ON
Typ (ns)
4
4
4
FEATURES
D
Low On-Resistance: 4391<30
W
D
Fast Switching—t
ON
: 4 ns
D
High Off-Isolation: I
D(off)
with Low
Leakage
D
Low Capacitance: < 3.5 pF
D
Low Insertion Loss
BENEFITS
D
D
D
D
D
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Eliminates Additional Buffering
APPLICATIONS
D
D
D
D
D
D
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
Commutators
DESCRIPTION
The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.
The 2N series hermetically-sealed TO-206AA (TO-18) can is
available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.
TO-206AA
(TO-18)
TO-226AA
(TO-92)
1
D
S
2
S
2
1
S
1
TO-236
(SOT-23)
D
3
G
2
D
Top View
2N4391
2N4392
2N4393
3
G and Case
G
3
Top View
PN4391
PN4392
PN4393
Top View
SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*
*Marking Code for TO-236
For applications information see AN104 and AN106
.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-1
2N/PN/SST4391 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . –40 V
(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300
_C
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . –65 to 200
_C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150
_C
Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . –55 to 200
_C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150
_C
Power Dissipation :
(2N Prefix)
a
. . . . . . . . . . (T
C
= 25_C) 1800 mW
(PN/SST Prefixes)
b
. . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 10 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4391
4392
4393
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage
Saturation Drain
Current
b
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
G
= –1
mA,
V
DS
= 0 V
V
DS
= 20 V
V
DS
= 15 V
2N/PN: I
D
= 1 nA
SST: I
D
= 10 nA
2N
PN
SST
V
GS
= –20 V
V
DS
= 0 V
2N/SST
PN
2N: T
A
= 150_C
PN: T
A
= 100_C
SST: T
A
= 125_C
–55
–40
–4
50
50
50
–10
150
150
–40
–2
25
25
25
–100
–1000
–200
–200
–100
–1000
–200
–200
–5
75
100
–40
V
–0.5
5
5
5
–100
–1000
–200
–200
nA
pA
–3
30
60
mA
I
DSS
V
DS
= 20 V, V
GS
= 0 V
–5
–5
–13
–1
–3
–5
5
5
5
0.005
0.005
0.005
5
13
13
13
1
1
1
3
0.25
0.3
0.35
Gate Reverse Current
I
GSS
Gate Operating Current
I
G
V
DG
= 15 V, I
D
= 10 mA
2N: V
GS
= –5 V
2N: V
GS
= –7 V
V
DS
= 20 V
2N: V
GS
= –12 V
PN: V
GS
= –5 V
PN: V
GS
= –7 V
PN: V
GS
= –12 V
SST V
DS
= 10 V, V
GS
= –10 V
100
100
100
1
1
1
100
100
100
200
200
200
200
200
200
nA
pA
nA
pA
Drain Cutoff Current
I
D(off)
V
DS
= 20 V
T
A
= 150_C
2N: V
GS
= –5 V
2N: V
GS
= –7 V
2N: V
GS
= –12 V
PN: V
GS
= –5 V
V
DS
= 20 V
T
A
= 100_C
V
DS
= 10 V
T
A
= 125_C
PN: V
GS
= –7 V
PN: V
GS
= –12 V
SST: V
GS
= –10 V
I
D
= 3 mA
0.4
0.4
0.4
30
60
1
100
1
V
W
V
Drain-Source
On-Voltage
Drain-Source
On-Resistance
Gate-Source
Forward Voltage
V
DS(on)
V
GS
= 0 V
I
D
= 6 mA
I
D
= 12 mA
r
DS(on)
V
GS(F)
V
GS
= 0 V, I
D
= 1 mA
I
G
= 1 mA
V
DS
= 0 V
2N
PN/SST
0.7
0.7
1
www.vishay.com
7-2
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
2N/PN/SST4391 Series
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4391
4392
4393
Parameter
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source
On-Resistance
Common-Source
Input Capacitance
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
g
fs
V
DS
= 20 V, I
D
= 1 mA, f = 1 kHz
g
os
r
DS(on)
V
GS
= 0 V, I
D
= 0 mA , f = 1 kHz
2N
C
iss
V
DS
= 20 V, V
GS
= 0 V
f = 1 MHz
PN
SST
2N: V
GS
= –5 V
2N: V
GS
= –7 V
2N: V
GS
= –12 V
PN: V
GS
= –5 V
C
rss
V
DS
= 0 V
f = 1 MHz
PN: V
GS
= –7 V
PN: V
GS
= –12 V
SST: V
GS
= –5 V
SST: V
GS
= –7 V
SST: V
GS
= –12 V
6
25
30
12
12
13
3.3
3.2
2.8
3.5
3.4
3.0
3.6
3.5
3.1
3
5
5
3.5
5
3.5
3.5
14
16
60
14
16
100
14
16
mS
mS
W
pF
Common-Source
Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
e
n
V
DS
= 10 V, I
D
= 10 mA
f = 1 kHz
nV⁄
√Hz
Switching
2N/PN
t
d(on)
Turn-On Time
t
r
t
d(off)
Turn-Off Time
t
f
V
DD
= 10 V
V
GS(H)
= 0 V
See Switching Circuit
SST
2N/PN
SST
2N/PN
SST
2N/PN
SST
2
2
2
2
6
6
13
13
NCB
15
20
30
20
35
50
ns
5
5
5
15
15
15
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-3
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
100
r
DS(on)
– Drain-Source On-Resistance (
Ω )
r
DS
@ I
D
= 1 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 20 V, V
GS
= 0 V
80
I
DSS
120
160
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
DSS
– Saturation Drain Current (mA)
100
On-Resistance vs. Drain Current
T
A
= 25_C
80
V
GS(off)
= –2 V
60
60
r
DS
40
80
40
–4 V
–8 V
20
40
20
0
0
–2
–4
–6
–8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
–10
0
0
1
10
I
D
– Drain Current (mA)
100
On-Resistance vs. Temperature
200
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
D
= 1 mA
r
DS
changes X 0.7%/_C
160
4
t
r
120
V
GS(off)
= –2 V
80
–4 V
40
–8 V
Switching Time (ns)
3
5
Turn-On Switching
t
r
approximately independent of I
D
V
DD
= 5 V, R
G
= 50 W
V
GS(L
)
= –10 V
t
d(on)
@
I
D
= 12 mA
2
t
d(on)
@
I
D
= 3 mA
1
0
–55 –35
0
–15
5
65
25 45
T
A
– Temperature (_C)
85
105
125
0
–4
–6
–8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
–2
–10
30
Turn-Off Switching
t
d(off)
independent of device V
GS(off
)
V
DD
= 5 V, V
GS(L)
= –10 V
30
Capacitance vs. Gate-Source Voltage
f = 1 MHz
V
DS
= 0 V
24
Switching Time (ns)
Capacitance (pF)
24
18
V
GS(off)
= –2 V
t
f
t
d(off)
18
12
12
C
iss
6
C
rss
0
6
V
GS(off)
= –8 V
0
0
2
4
6
I
D
– Drain Current (mA)
8
10
0
–4
–8
–12
–16
V
GS
– Gate-Source Voltage (V)
–20
www.vishay.com
7-4
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
50
V
DS
= 10 V
g
fs
– Forward Transconductance (mS)
40
g
fs
and g
os
@ V
DS
= 20 V
V
GS
= 0 V, f = 1 kHz
400
gos – Output Conductance (µS)
500
Noise Voltage vs. Frequency
100
en – Noise Voltage nV /
Hz
30
g
fs
g
os
200
10
I
D
= 1 mA
20
200
I
D
= 10 mA
10
100
1
10
100
1k
f – Frequency (Hz)
10 k
100 k
0
0
–4
–6
–8
V
GS(off)
– Gate-Source Cutoff Voltage (V)
–2
–10
0
Gate Leakage Current
10 nA
I
GSS
@ 125_C
T
A
= 125_C
I
D
= 10 mA
100
Common-Gate Input Admittance
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
1 nA
I
G
– Gate Leakage)
g
ig
100 pA
1 mA
(mS)
1 mA
10
b
ig
10 pA
T
A
= 25_C
1 pA
10 mA
I
GSS
@ 25_C
1
I
G(on)
@ I
D
0.1 pA
0
6
12
18
24
V
DG
– Drain-Gate Voltage (V)
30
0.1
100
200
500
f – Frequency (MHz)
1000
Common-Gate Forward Admittance
100
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
–g
fg
10
(mS)
(mS)
g
fg
b
fg
1.0
10
Common-Gate Reverse Admittance
V
DG
= 10 V
I
D
= 10 mA
T
A
= 25_C
–b
rg
–g
rg
+g
rg
1
0.1
0.1
100
200
500
f – Frequency (MHz)
1000
0.01
100
200
500
f – Frequency (MHz)
1000
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-5
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