2N/PN/SST4391
SERIES
SINGLE N-CHANNEL JFET SWITCH
FEATURES
Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393
LOW ON RESISTANCE
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature (2N)
Storage Temperature (PN/SST)
Junction Operating Temperature (2N)
Junction Operating Temperature (PN/SST)
Maximum Power Dissipation
Continuous Power Dissipation (2N)@Tc=25°C
Continuous Power Dissipation (PN/SST)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain or Source (2N/PN)
-40V
50mA
1800mW
350mW
3
4
1
r
DS(on)
≤ 30Ω
t
ON
≤ 15ns
2N SERIES
PN SERIES
SST SERIES
SOT-23
TOP VIEW
D
1
3
-65 to 200°C
-55 to 150°C
-55 to 200°C
-55 to 150°C
G
S
2
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
V
DS(on)
CHARACTERISTIC
Gate to Source
Breakdown Voltage
Gate to Source
Cutoff Voltage
2N/PN/SST
2N/PN
SST
0.7
0.25
Drain to Source On Voltage
2N
I
DSS
Drain to Source
2
Saturation Current
PN
SST
I
GSS
I
G
Gate Leakage Current
Gate Operating Current
2N/SST
PN
-5
-5
-5
0.3
0.35
50
50
50
-100
-1000
0.4
165
165
25
25
25
-100
-1000
150
150
5
5
5
-100
-1000
pA
V
GS
= -20V, V
DS
= 0V
V
DG
= 15V, I
D
= 10mA
125
125
mA
V
DS
= 20V, V
GS
= 0V
0.4
TYP
4391
MIN
-40
-4
-4
-10
-10
1
MAX
4392
MIN
-40
-2
-2
-5
-5
1
MAX
4393
MIN
-40
-0.5
-0.5
-3
-3
1
0.4
V
MAX
UNIT
CONDITIONS
I
G
= -1µA, V
DS
= 0V
V
DS
= 20V, I
D
= 1nA
V
DS
= 15V, I
D
= 10nA
I
G
= 1mA, V
DS
= 0V
V
GS
= 0V, I
D
= 3mA
V
GS
= 0V, I
D
= 6mA
V
GS
= 0V, I
D
= 12mA
Gate to Source Forward Voltage
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391
STATIC ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated)
SYM.
CHARACTERISTIC
TYP
5
2N
I
D(off)
Drain Cutoff Current
PN
SST
r
DS(on)
Drain to Source On Resistance
5
5
5
5
5
5
1000
100
30
100
60
100
100
Ω
4391
MIN
MAX
4392
MIN
MAX
100
4393
MIN
MAX
100
UNIT
CONDITIONS
V
DS
= 20V, V
GS
= -5V
V
DS
= 20V, V
GS
= -7V
V
DS
= 20V, V
GS
= -12V
100
1000
1000
pA
V
DS
= 20V, V
GS
= -5V
V
DS
= 20V, V
GS
= -7V
V
DS
= 20V, V
GS
= -12V
V
DS
= 10V, V
GS
= -12V
V
GS
= 0V, I
D
= 1mA
DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
g
fs
g
os
r
ds(on)
C
iss
CHARACTERISTIC
Forward Transconductance
Output Conductance
Drain to Source On Resistance
2N
Input Capacitance
PN
SST
2N
PN
SST
2N
C
rss
Reverse Transfer
Capacitance
PN
SST
2N
PN
SST
e
n
Equivalent Input Noise Voltage
12
12
13
3.3
3.5
3.6
3.2
3.4
3.5
2.8
3.0
3.1
3
nV/√Hz
TYP
6
25
4391
MIN
MAX
4392
MIN
MAX
4393
MIN
MAX
UNIT
mS
µS
CONDITIONS
V
DS
= 20V, I
D
= 1mA
f
= 1kHz
V
GS
= 0V, I
D
= 1mA
V
DS
= 20V, V
GS
= 0V
f
= 1MHz
30
14
16
60
14
16
100
14
16
3.5
5
Ω
V
DS
= 0V, V
GS
= -5V
f
= 1MHz
pF
V
DS
= 0V, V
GS
= -7V
f
= 1MHz
3.5
5
3.5
5
V
DS
= 0V, V
GS
= -12V
f
= 1MHz
V
DS
= 10V, I
D
= 10mA
f
= 1kHz
SWITCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
t
d(on)
Turn On Time
t
r
t
d(off)
Turn Off Time
t
f
CHARACTERISTIC
2N/PN
SST
2N/PN
SST
2N/PN
SST
2N/PN
SST
TYP
2
2
2
2
6
6
13
13
15
20
30
20
35
50
5
5
5
ns
V
DD
= 10V, V
GS(H)
= 0V
4391
MIN
MAX
15
4392
MIN
MAX
15
4393
MIN
MAX
15
UNIT
CONDITIONS
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391
SWITCHING CIRCUIT CHARACTERISTICS
SYM.
V
GS(L)
R
L
I
D(on)
4391
-12V
800Ω
12mA
4392
-7V
1600Ω
6mA
4393
-5V
3200Ω
3mA
SWITCHING TEST CIRCUIT
V
DD
V
GS(H)
V
GS(L)
R
L
OUT
1k
51
51
*
*
0.89
1.03
SOT-23
1
0.37
0.51
0.210
0.170
1.78
2.05
3
2.80
3.04
2
1.20
1.40
2.10
2.64
0.085
0.180
0.89
1.12
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
*Dimensions in inches
NOTES
1.
2.
3.
4.
Absolute maximum ratings are limiting values above which serviceability may be impaired.
Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
Derate 10mW/
°C above 25°C
Derate 2.8mW/°C above 25°C
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391
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