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KSA1298L99Z

产品描述Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
产品类别分立半导体    晶体管   
文件大小34KB,共2页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 选型对比 全文预览

KSA1298L99Z概述

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon

KSA1298L99Z规格参数

参数名称属性值
厂商名称Fairchild
包装说明SMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)0.8 A
集电极-发射极最大电压25 V
配置SINGLE
最小直流电流增益 (hFE)40
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子形式GULL WING
端子位置DUAL
晶体管元件材料SILICON
标称过渡频率 (fT)120 MHz

文档预览

下载PDF文档
KSA1298
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER
Complement to KSC3265
STO-23
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Refer to KSA643 for graphs.
1. Base 2. Emitter 3. Collector
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Rating
-30
-25
-5
-800
-160
200
150
-55 ~ 150
Unit
V
V
V
mA
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(on)
f
T
C
OB
Test Condition
I
C
= -10mA, I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -30V, I
E
=0
V
BE
= -5V, I
C
=0
V
CE
= -1V, I
C
= -100mA
V
CE
= -1V, I
C
= -800mA
I
C
= -500mA, I
B
= -20mA
V
CE
= -1V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA
V
CB
= -10V, I
E
= 0
f=1MHz
Min
-25
-5
-100
-100
320
-0.4
-0.8
120
13
Typ
Max
Unit
V
V
nA
nA
100
40
-0.5
V
V
MHz
pF
h
FE
(1) CLASSIFICATION
Classification
h
FE
(1)
O
100-200
Y
160-320
Rev. B
©
1999 Fairchild Semiconductor Corporation

KSA1298L99Z相似产品对比

KSA1298L99Z KSA1298S62Z KSA1298D87Z
描述 Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
厂商名称 Fairchild Fairchild Fairchild
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.8 A 0.8 A 0.8 A
集电极-发射极最大电压 25 V 25 V 25 V
配置 SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 40 40 40
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1
端子数量 3 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES
端子形式 GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 120 MHz 120 MHz 120 MHz

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