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HMC870LC5_10

产品描述0MHz - 20000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
产品类别热门应用    无线/射频/通信   
文件大小1017KB,共12页
制造商Hittite Microwave(ADI)
官网地址http://www.hittite.com/
下载文档 详细参数 选型对比 全文预览

HMC870LC5_10概述

0MHz - 20000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

0MHz - 20000MHz 射频/微波宽带低功率放大器

HMC870LC5_10规格参数

参数名称属性值
最大工作温度85 Cel
最小工作温度-40 Cel
最大输入功率23 dBm
最大工作频率20000 MHz
最小工作频率0.0 MHz
加工封装描述5 X 5 MM, ROHS COMPLIANT, LEADLESS, SMT, 32 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
结构COMPONENT
端子涂层GOLD (80) OVER NICKEL (50)
阻抗特性50 ohm
微波射频类型WIDE BAND LOW POWER

文档预览

下载PDF文档
HMC870LC5
v02.0110
MZ OPTICAL MODULATOR
DRIVER, DC - 20 GHz
Typical Applications
The HMC870LC5 is ideal for:
• 10 Gbps NRZ MZ & Low V
Modulator Driver
• 10 Gbps RZ Transmission
• 40 Gbps DQPSK
• Broadband Gain Block for
Test & Measurement Equipment
Features
Wide Supply Range from 3.3V to 7V
Adjustable Output Amplitude: 2.5 to 8Vp-p
Low Additive RMS Jitter, <300fs
Low DC Power Consumption
1W for Vout = 8Vp-p at Vdd = 7V
Cross Point Adjustment
32 Lead 5x5mm SMT Package: 25mm2
10
MICROWAVE & OPTICAL DRIVERS - SMT
• Military & Space
Functional Diagram
General Description
The HMC870LC5 is a GaAs MMIC pHEMT Distri-
buted Driver Amplifier packaged in a leadless 5x5 mm
surface mount package which operates between
DC and 20 GHz. The amplifier provides 17 dB of gain,
8Vp-p saturated output swing and features output
swing cross point adjustment. Gain flatness is excel-
lent at ±0.5 dB as well as very low additive RMS jitter
of 300 fs for 10 Gbps operation. HMC870LC5 prov-
ides Metro and Long Haul designers with scalable
power dissipation for varying output drive require-
ments. (<0.4W at Vout = 3.6Vp-p and <1W at Vout =
8.5Vp-p) The HMC870LC5 has a very wide supply
(Vdd) operating range from +3.3V to +7V, and the RF
I/Os are internally matched to 50 Ohms.
Electrical Specifi cations,
T
A
= +25° C, Vdd = 7V, Vctl = 1V, Idd = 165mA*
Parameter
Gain
Small Signal Bandwidth
Input Return Loss
Output Return Loss
Gain Variation over Temperature
Group Delay Variation
Saturated Output Power (Psat)
Conditions
Frequency = 1 - 8 GHz
Frequency = 8 - 16 GHz
Frequency = 16 - 20 GHz
3-dB cutoff
Frequency = 1 - 10 GHz
Frequency = 10 - 20 GHz
Frequency = 1 - 10 GHz
Frequency = 10 - 20 GHz
Frequency = 1 - 10 GHz
Frequency = 10 - 20 GHz
Frequency = 1 - 12 GHz
Frequency = 1 - 12 GHz
Frequency = 12 - 20 GHz
Min.
14
13
12
Typ.
17.5
16.5
16
20
20
15
20
15
0.015
0.032
±15
24
23
0.02
0.045
Max.
Units
dB
dB
dB
GHz
dB
dB
dB
dB
dB/°C
dB/°C
ps
dBm
dBm
* Adjust Vgg between -2V to 0V to achieve Idd= 165 mA typical.
10 - 2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

HMC870LC5_10相似产品对比

HMC870LC5_10 HMC870LC5
描述 0MHz - 20000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 0MHz - 20000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
最大工作频率 20000 MHz 20000 MHz

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