LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
•
Moisture Sensitivity Level: 1
•
ESD Rating – Human Body Model: >4000 V
ESD Rating
– Machine Model: >400 V
•
We declare that the material of product compliance with
RoHS requirements.
LBC857CLT1G
S-LBC857CLT1G
Series
3
•
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
LBC856
LBC857
LBC858, LBC859
Symbol
VCEO
Value
–65
–45
–30
–80
–50
–30
–5.0
–100
Unit
V
1
2
SOT–23
Collector-Base Voltage
VCBO
V
3
COLLECT OR
Emitter–Base Voltage
Collector Current – Continuous
VEBO
IC
V
mAdc
1
B ASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
Symbol
PD
225
1.8
R
qJA
PD
300
2.4
R
qJA
TJ, Tstg
417
–55 to
+150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
xx
Max
Unit
2
EMIT T ER
MARKING DIAGRAM
3
2
1
xx= Device Marking
(See Table Below)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Rev.O 1/7
LESHAN RADIO COMPANY, LTD.
LBC857CLT1G Series
S-LBC857CLT1G Series
DEVICE MARKING AND ORDERING INFORMATION
Device
LBC856ALT1G
S-LBC856ALT1G
LBC856ALT3G
S-LBC856ALT3G
LBC856BLT1G
S-LBC856BLT1G
LBC856BLT3G
S-LBC856BLT3G
LBC857ALT1G
S-LBC857ALT1G
LBC857ALT1G
S-LBC857ALT1G
LBC857BLT1G
S-LBC857BLT1G
LBC857BLT3G
S-LBC857BLT3G
LBC857CLT1G
S-LBC857CLT1G
LBC857CLT1G
S-LBC857CLT1G
LBC858ALT1G
S-LBC858ALT1G
LBC858ALT1G
S-LBC858ALT1G
LBC858BLT1G
S-LBC858BLT1G
LBC858BLT3G
S-LBC858BLT3G
LBC858CLT1G
S-LBC858CLT1G
LBC858CLT3G
S-LBC858CLT3G
LBC859BLT1G
S-LBC859BLT1G
LBC859BLT1G
S-LBC859BLT1G
LBC859CLT1G
S-LBC859CLT1G
LBC859CLT3G
S-LBC859CLT3G
Marking
3A
3A
3B
3B
3E
3E
3F
3F
3G
3G
3J
3J
3K
3K
3L
3L
4B
4B
4C
4C
Package
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
Rev.O 2/7
LESHAN RADIO COMPANY, LTD.
LBC857CLT1G Series
S-LBC857CLT1G Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(IC = –10
µA,
VEB = 0)
Collector–Base Breakdown Voltage
(IC = –10
mA)
Emitter–Base Breakdown Voltage
(IE = –1.0
mA)
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
V(BR)CEO
–65
–45
–30
–80
–50
–30
–80
–50
–30
–5.0
–5.0
–5.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–15
–4.0
V
V(BR)CES
V
V(BR)CBO
V
V(BR)EBO
V
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current
(VCB = –30 V, TA = 150°C)
ICBO
nA
µA
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mA, VCE = –5.0 V)
LBC856A, LBC857A, LBC858A
LBC856B, LBC857B, LBC858B, LBC859B
LBC857C, LBC858C, LBC859C
VCE(sat)
–
–
VBE(sat)
–
–
VBE(on)
–0.6
–
–
–
–0.75
–0.82
–0.7
–0.9
–
–
V
–
–
–0.3
–0.65
V
hFE
125
220
420
180
290
520
250
475
800
V
–
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
LBC856, LBC857, LBC858 Series
LBC859 Series
fT
Cob
NF
–
–
–
–
10
4.0
100
–
–
–
–
4.5
MHz
pF
dB
Rev.O 3/7
LESHAN RADIO COMPANY, LTD.
LBC857CLT1G Series
S-LBC857CLT1G Series
LBC857/ LBC858
–1.0
2.0
h
FE
, NORMALIZED DC CURRENT GAIN
1.5
V
CE
= –10 V
V, VOLTAGE (VOLTS)
T
A
= 25°C
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
=10
1.0
0.7
V
BE(on)
@ V
CE
= –10 V
0.5
0.3
V
CE(sat)
@ I
C
/I
B
= 10
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
θ
VB
, TEMPERATURE COEFFICIENT (mV/ °C)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
V
CE
, COLLECTOR– EMITTER VOLTAGE (V)
–2.0
1.0
T
A
= 25°C
–1.6
–55°C to +125°C
1.2
1.6
–1.2
2.0
–0.8
I
C
=
–10 mA
I
C
= –50 mA
I
C
= –200 mA
I
C
= –100 mA
2.4
–0.4
I
C
= –20 mA
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
I
B
, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
400
300
10.0
f
T
, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
C
ib
7.0
200
T
A
=25°C
5.0
V, VOLTAGE (VOLTS)
100
80
V
CE
=–10V
T
A
= 25°C
3.0
C
ob
60
40
30
20
2.0
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Rev.O 4/7
LESHAN RADIO COMPANY, LTD.
LBC857CLT1G Series
S-LBC857CLT1G Series
LBC856
h
FE
, DC CURRENT GAIN (NORMALIZED)
–1.0
V
CE
= –5.0V
T
A
= 25°C
2.0
1.0
0.5
0.2
–0.1–0.2
–1.0–2.0 –5.0–10–20 –50–100–200
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
–0.8
V
BE(sat)
@ I
C
/I
B
= 10
–0.6
–0.4
–0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
V
BE
@V
CE
= –5.0 V
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
–2.0
–1.6
–1.2
–0.8
–0.4
T
J
= 25°C
0
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
I
C
=
–10 mA
–20mA
–50mA
–100mA –200mA
Figure 8. “On” Voltage
θ
VB
, TEMPERATURE COEFFICIENT (mV/°C)
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–0.2
θ
VB
for V
BE
–55°C to 125°C
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
f
T
, CURRENT– GAIN – BANDWIDTH PRODUCT T
40
C, CAPACITANCE (pF)
T
J
= 25°C
C
ib
500
200
100
50
20
V
CE
= –5.0 V
20
10
8.0
6.0
4.0
2.0
–0.1–0.2 –0.5
C
ob
–1.0 –2.0
–5.0 –10 –20
–50 –100
–1.0
–10
–100
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
Rev.O 5/7
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