PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE: TO-220AB
TYPE: BUZ50B
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature From Case
ELECTRICAL CHARACTERISTICS TA @ 25°C
°
Parameters
Symbol
Test Conditions
Drain Source
BVDSS V
GS
= 0V, I
D
= .25mA
Breakdown Voltage
Gate Threshold Voltage VGS(th) V
DS
= V
GS
, I
D
= 1.0mA
Gate – Body Leakage
Current
Zero Gate Voltage
Drain Current
On State Drain Current
Drain Source On-
Resistance
Forward
Transconductance
Drain-Source On
Voltage
Drain-Source-On
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
IGSS
IDSS
ID(on)
rDS(on)
gFS
VDS(on)
VDS(on)
Ciss
Coss
Crss
V
GS
= 0V, V
DS
= 25V, f = 1 MHz
2100
120
55
V
GS
= 10V, I
D
= 1.5A
V
DS
= 25V, I
D
= 1.5A
0.7
8.0
V
GS
=
±
20V, V
DS
= 0V
V
DS
= 1000V, V
GS
= 0V,
V
DS
= 1000V, V
GS
= 0V, T
J
= 125°C
VDSS
VDGR
ID
IDM
VGS
PD
IL
TJ & Tstg
TL
1000
1000
2.0
8.0
±20
75
-55 to +150
Vdc
Vdc
Adc
Adc
Vdc
Watts
Adc
°C
°C
Min
1000
2.1
Typ
Max
Unit
Vdc
Vdc
nA
mA
mA
Adc
Ohms
mhos
Vdc
Vdc
pF
pF
pF
4.0
100
0.25
1.0
Page 1 of 2
TYPE:
BUZ50B
Drain Source Diode Characteristics
Forward On Voltage
I
F
= 4.0A, V
GS
= 0V
Reverse Recovery Time
Reverse Recovery Charge
Total Gate Charge
Gate – Source Charge
Gate – Drain Charge
I
F
= 2.0A
di
F
/dt = 100A/µs, V
GS
= 0V
V
R
= 100V
Symbol
VSD
trr
Qrr
Qg
Qgs
Qgd
Min
Typ
Max
1.3
Units
Vdc
ns
µC
nC
nC
nC
2000
15
Switching Characteristics
Turn-On Time
Turn-Off Time
Delay Time (Turn On)
Rise Time
Delay Time (Turn Off)
Fall Time
V
DD
= 30V, I
D
= 1.7A
V
GS
= 10V, R
GS
= 50Ω
Rgen = 50Ω
Symbol
ton
toff
td(on)
tr
td(off)
tf
Min
Typ
Max
Units
45
60
140
80
ns
ns
ns
ns
Thermal Characteristics
Junction To Case
Junction To Ambient
Internal Package Inductance
Internal Drain Inductance
Internal Source Inductance
Symbol
R
θJC
R
θJA
Symbol
Ld
Ls
Typ
4.5
7.5
Max
Units
°C/W
°C/W
Units
nH
nH
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