Datasheet> 器件分类 > 分立半导体> 晶体管> BUZ50B-220MR1

BUZ50B-220MR1: 产品描述Power Field-Effect Transistor, 1.5A I(D), 1000V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN; 产品类别分立半导体晶体管; 文件大小18KB，共2页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/; 标准

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BUZ50B-220MR1概述

Power Field-Effect Transistor, 1.5A I(D), 1000V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

BUZ50B-220MR1规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	TT Electronics plc
包装说明	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
外壳连接	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	1000 V
最大漏极电流 (ID)	1.5 A
最大漏源导通电阻	10 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-257AB
JESD-30 代码	S-MSFM-P3
JESD-609代码	e1
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	200 °C
封装主体材料	METAL
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	4.5 A
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN SILVER COPPER
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON

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BUZ50A–220M

BUZ50B–220M

MECHANICAL DATA

Dimensions in mm

10.6 (0.42)

0.8

(0.03)

4.6 (0.18)

MOS POWER N-CHANNEL

ENHANCEMENT MODE

TRANSISTORS

FEATURES

• HERMETIC TO220 ISOLATED METAL

PACKAGE

16.5 (0.65)

3.70 Dia. Nom

1.5(0.53)

10.6 (0.42)

1 2 3

12.70 (0.50 min)

• CECC SCREENING OPTIONS

• JAN LEVEL SCREENING OPTIONS

APPLICATIONS:

1.0

(0.039)

2.70

(0.106)

2.54 (0.1)

BSC

Hermetically sealed version for high relia-

bility power linear and switching applica-

tions

TO220M (TO-257AB)-

Isolated Metal Package

Pin 1

– Gate

Pin 2

– Drain

Pin 3

– Source

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

stg

Drain – Source Voltage

Gate – Source Voltage

Continious Drain Current

Maximum Pulsed Drain Current

Total Power Dissipation at T

case

≤

25°C

Storage Temperature Range

Operating Junction Temperature Range

BUZ50A

1000V

20V

BUZ50B

1000V

20V

1.0A

4.0A

75W

1.5A

4.5A

–65°C To 200°C

200°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Document Number 5541

Issue 1

BUZ50B-220MR1相似产品对比

	BUZ50B-220MR1	BUZ50A-220MR1
描述	Power Field-Effect Transistor, 1.5A I(D), 1000V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN	Power Field-Effect Transistor, 1A I(D), 1000V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN
是否Rohs认证	符合	符合
包装说明	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compliant
外壳连接	ISOLATED	ISOLATED
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	1000 V	1000 V
最大漏极电流 (ID)	1.5 A	1 A
最大漏源导通电阻	10 Ω	10 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-257AB	TO-257AB
JESD-30 代码	S-MSFM-P3	S-MSFM-P3
JESD-609代码	e1	e1
元件数量	1	1
端子数量	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	200 °C	200 °C
封装主体材料	METAL	METAL
封装形状	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	4.5 A	4 A
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子面层	TIN SILVER COPPER	TIN SILVER COPPER
端子形式	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

BUZ50B-220MR1

BUZ50B-220MR1概述

BUZ50B-220MR1规格参数

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BUZ50B-220MR1相似产品对比

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