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HY5DU121622BT-6: 产品描述512Mb(32Mx16) gDDR SDRAM; 产品类别存储存储; 文件大小227KB，共30页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/

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HY5DU121622BT-6概述

512Mb(32Mx16) gDDR SDRAM

HY5DU121622BT-6规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	SK Hynix(海力士)
零件包装代码	TSOP2
包装说明	TSOP2, TSSOP66,.46
针数	66
Reach Compliance Code	unknow
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	0.7 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	166 MHz
I/O 类型	COMMON
交错的突发长度	2,4,8
JESD-30 代码	R-PDSO-G66
JESD-609代码	e0
长度	22.225 mm
内存密度	536870912 bi
内存集成电路类型	DDR DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	66
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	32MX16
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSSOP66,.46
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	2.5 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	1.194 mm
自我刷新	YES
连续突发长度	2,4,8
最大待机电流	0.01 A
最大供电电压 (Vsup)	2.6 V
最小供电电压 (Vsup)	2.4 V
标称供电电压 (Vsup)	2.5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn/Pb)
端子形式	GULL WING
端子节距	0.65 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	10.16 mm

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HY5DU121622BT(P)

512Mb(32Mx16) gDDR SDRAM

HY5DU121622BT(P)

This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.2 / Mar. 2005

HY5DU121622BT(P)

PIN DESCRIPTION

CK, /CK

TYPE

Input

DESCRIPTION

Clock: CK and /CK are differential clock inputs. All address and control input signals are

sampled on the crossing of the positive edge of CK and negative edge of /CK. Output

(read) data is referenced to the crossings of CK and /CK (both directions of crossing).

Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and

device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER

DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row

ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF

REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE

must be maintained high throughout READ and WRITE accesses. Input buffers, excluding

CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are

disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW

level after Vdd is applied.

Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All com-

mands are masked when CS is registered high. CS provides for external bank selection on

systems with multiple banks. CS is considered part of the command code.

Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRE-

CHARGE command is being applied.

Address Inputs: Provide the row address for ACTIVE commands, and the column address

and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the

memory array in the respective bank. A10 is sampled during a precharge command to

determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10

HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The

address inputs also provide the op code during a MODE REGISTER SET command. BA0

and BA1 define which mode register is loaded during the MODE REGISTER SET command

(MRS or EMRS).

Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being

entered.

Input Data Mask: DM is an input mask signal for write data. Input data is masked when

DM is sampled HIGH along with that input data during a WRITE access. DM is sampled

on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ

and DQS loading. For the x16, LDM corresponds to the data on DQ0-Q7; UDM corre-

sponds to the data on DQ8-Q15.

Data Strobe: Output with read data, input with write data. Edge aligned with read data,

centered in write data. Used to capture write data. For the x16, LDQS corresponds to the

data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15.

Data input / output pin : Data bus

Power supply for internal circuits and input buffers.

Power supply for output buffers for noise immunity.

Reference voltage for inputs for SSTL interface.

No connection.

CKE

Input

/CS

Input

BA0, BA1

Input

A0 ~ A12

Input

/RAS, /CAS, /WE

Input

(LDM,UDM)

Input

DQS

(LDQS,UDQS)

DDQ

SSQ

REF

I/O

Supply

Rev. 0.2 / Mar. 2005

HY5DU121622BT-6相似产品对比

	HY5DU121622BT-6	HY5DU121622BT-5	IPP-1195	HY5DU121622BTP-6
描述	512Mb(32Mx16) gDDR SDRAM	512Mb(32Mx16) gDDR SDRAM	OUTLINE 2-WAY	512Mb(32Mx16) gDDR SDRAM
是否Rohs认证	不符合	不符合	-	符合
厂商名称	SK Hynix(海力士)	SK Hynix(海力士)	-	SK Hynix(海力士)
零件包装代码	TSOP2	TSOP2	-	TSOP2
包装说明	TSOP2, TSSOP66,.46	TSOP2, TSSOP66,.46	-	TSOP2, TSSOP66,.46
针数	66	66	-	66
Reach Compliance Code	unknow	unknow	-	unknow
ECCN代码	EAR99	EAR99	-	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST
最长访问时间	0.7 ns	0.7 ns	-	0.7 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	166 MHz	200 MHz	-	166 MHz
I/O 类型	COMMON	COMMON	-	COMMON
交错的突发长度	2,4,8	2,4,8	-	2,4,8
JESD-30 代码	R-PDSO-G66	R-PDSO-G66	-	R-PDSO-G66
长度	22.225 mm	22.225 mm	-	22.225 mm
内存密度	536870912 bi	536870912 bi	-	536870912 bi
内存集成电路类型	DDR DRAM	DDR DRAM	-	DDR DRAM
内存宽度	16	16	-	16
功能数量	1	1	-	1
端口数量	1	1	-	1
端子数量	66	66	-	66
字数	33554432 words	33554432 words	-	33554432 words
字数代码	32000000	32000000	-	32000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
最高工作温度	70 °C	70 °C	-	70 °C
组织	32MX16	32MX16	-	32MX16
输出特性	3-STATE	3-STATE	-	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	-	TSOP2
封装等效代码	TSSOP66,.46	TSSOP66,.46	-	TSSOP66,.46
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-	260
电源	2.5 V	2.5 V	-	2.5 V
认证状态	Not Qualified	Not Qualified	-	Not Qualified
刷新周期	8192	8192	-	8192
座面最大高度	1.194 mm	1.194 mm	-	1.194 mm
自我刷新	YES	YES	-	YES
连续突发长度	2,4,8	2,4,8	-	2,4,8
最大待机电流	0.01 A	0.01 A	-	0.01 A
最大供电电压 (Vsup)	2.6 V	2.6 V	-	2.6 V
最小供电电压 (Vsup)	2.4 V	2.4 V	-	2.4 V
标称供电电压 (Vsup)	2.5 V	2.5 V	-	2.5 V
表面贴装	YES	YES	-	YES
技术	CMOS	CMOS	-	CMOS
温度等级	COMMERCIAL	COMMERCIAL	-	COMMERCIAL
端子形式	GULL WING	GULL WING	-	GULL WING
端子节距	0.65 mm	0.65 mm	-	0.65 mm
端子位置	DUAL	DUAL	-	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-	20
宽度	10.16 mm	10.16 mm	-	10.16 mm

HY5DU121622BT-6

HY5DU121622BT-6概述

HY5DU121622BT-6规格参数

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