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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MJE370 PNP
MJE520 NPN
SILICON COMPLEMENTARY
POWER TRANSISTORS
JEDEC TO-126 CASE
MJE370, MJE520 types are Complementary Silicon Power Transistors
designed for use in general purpose a m p l i f i e r and switching applications.
MAXIMUM RATINGS
(T
C
=25°C)
SYMBOL
UNIT
30
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Col lector Current
Collector Current (PEAK)
Powe r 0 i s s i pa t i on
Operating and Storage
Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS
SYMBOL
(T
C
=25°C)
VCEO
VEBO
CM
V
CBO
30
4.0
3-0
7.0
25
stg
V
V
V
A
A
W
°C
°C/W
9JC
-65 TO -1-150
5.0
TEST CONDITIONS
MIN
MAX
100
100
UNIT
PA
V
'CBO
IEBO
v
EB
=4.ov
l
c
=100mA
V
CE
=1.0V, I
C
=1.0A
30
25
V
CB
=30V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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