HMT164U6BFR6C
HMT112U6(7)BFR8C
HMT125U6(7)BFR8C
Table of Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Features
1.1.2 Ordering Information
1.2 Speed Grade & Key Parameters
1.3 Address Table
2. Pin Architecture
2.1 Pin Definition
2.2 Input/Output Functional Description
2.3 Pin Assignment
3. Functional Block Diagram
3.1 512MB, 64Mx64 Module(1Rank of x16)
3.2 1GB, 128Mx64 Module(1Rank of x8)
3.3 1GB, 128Mx72 ECC Module(1Rank of x8)
3.4 2GB, 256Mx64 Module(2Rank of x8)
3.5 2GB, 256Mx72 ECC Module(2Rank of x8)
4. Address Mirroring Feature
4.1 DRAM Pin Wiring for Mirroring
5. Absolute Maximum Ratings
5.1 Absolute Maximum DC Ratings
5.2 Operating Temperature Range
6. AC & DC Operating Conditions
6.1 Recommended DC Operating Conditions
6.2 DC & AC Logic Input Levels
6.2.1 For Single-ended Signals
6.2.2 For Differential Signals
6.2.3 Differential Input Cross Point
6.3 Slew Rate Definition
6.3.1 For Ended Input Signals
6.3.2 For Differential Input Signals
6.4 DC & AC Output Buffer Levels
6.4.1 Single Ended DC & AC Output Levels
6.4.2 Differential DC & AC Output Levels
6.4.3 Single Ended Output Slew Rate
6.4.4 Differential Ended Output Slew Rate
6.5 Overshoot/Undershoot Specification
6.6 Input/Output Capacitance & AC Parametrics
6.7 IDD Specifications & Measurement Conditions
7. Electrical Characteristics and AC Timing
7.1 Refresh Parameters by Device Density
7.2 DDR3 Standard speed bins and AC para
8. DIMM Outline Diagram
8.1 512MB, 64Mx64 Module(1Rankx16)
8.2 1GB, 128Mx64 Module(1Rank of x8)
8.3 1GB, 128Mx72 ECC Module(1Rank of x8)
8.4 2GB, 256Mx64 Module(2Rank of x8)
8.5 2GB, 256Mx72 ECC Module(2Rank of x8)
Rev. 0.1 / Apr 2009
3
HMT164U6BFR6C
HMT112U6(7)BFR8C
HMT125U6(7)BFR8C
1. Description
This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 1Gb B version. DDR3 SDRAMs in Fine
Ball Grid Array(FBGA) packages on a 240 pin glass-epoxy substrate. This DDR3 Unbuffered DIMM series based on 1Gb
B ver. provide a high performance 8 byte interface in 133.35mm width form factor of industry standard. It is suitable
for easy interchange and addition.
1.1 Device Features & Ordering Information
1.1.1 Features
• VDD=VDDQ=1.5V
• VDDSPD=3.3V to 3.6V
• Fully differential clock inputs (CK, /CK) operation
• Differential Data Strobe (DQS, /DQS)
• On chip DLL align DQ, DQS and /DQS transition with
CK transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data, data
strobes and data masks latched on the rising edges of
the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, and (11)
supported
• Programmable additive latency 0, CL-1, and CL-2 sup
ported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
• 8K refresh cycles /64ms
• DDR3 SDRAM Package: JEDEC standard 78ball
FBGA(x4/x8), 96ball FBGA(x16) with support balls
• Driver strength selected by EMRS
• Dynamic On Die Termination supported
• Asynchronous RESET pin supported
• ZQ calibration supported
• TDQS (Termination Data Strobe) supported (x8 only)
• Write Levelization supported
• Auto Self Refresh supported
• On Die Thermal Sensor supported (JEDEC optional)
Rev. 0.1 / Apr 2009
4
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