INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector–Emitter
Sustaining Voltage—
: V
CEO(SUS)
= -80 V
·DC
Current Gain—
: h
FE
= 750(Min) @ I
C
= -2 A
= 100(Min) @ I
C
= -4A
·Complement
to Type MJE803
MJE703
APPLICATIONS
·Designed
for general-purpose amplifier and low-speed
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
-80
-80
-5
-4
-1
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
3.13
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(on)-1
V
BE
(on)-2
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
CONDITIONS
I
C
= -50mA; I
B
= 0
I
C
= -2A; I
B
= -40mA
B
MJE703
MIN
-80
MAX
UNIT
V
-2.8
-3.0
-2.5
-3.0
-0.1
-0.1
-0.5
-2.0
750
100
V
V
V
V
mA
mA
mA
I
C
= -4A; I
B
= -40mA
B
I
C
= -2A
;
V
CE
= -3V
I
C
= -4A
;
V
CE
= -3V
V
CE
= -80V
;
I
B
= 0
V
CB
= -80V
;
I
E
= 0
V
CB
= -80V
;
I
E
= 0;T
C
= 150℃
V
EB
= -5V; I
C
= 0
I
C
= -2 A ; V
CE
= -3V
I
C
= -4A ; V
CE
= -3V
isc Website：www.iscsemi.cn
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
