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HMP512U6FFP8C-S6: 产品描述240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.; 产品类别存储存储; 文件大小439KB，共25页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/; 标准

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HMP512U6FFP8C-S6概述

240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.

HMP512U6FFP8C-S6规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SK Hynix(海力士)
零件包装代码	DIMM
包装说明	DIMM, DIMM240,40
针数	240
Reach Compliance Code	compli
ECCN代码	EAR99
访问模式	DUAL BANK PAGE BURST
最长访问时间	0.4 ns
其他特性	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
最大时钟频率 (fCLK)	400 MHz
I/O 类型	COMMON
JESD-30 代码	R-XZMA-N203
长度	133.35 mm
内存密度	1073741824 bi
内存集成电路类型	DDR DRAM MODULE
内存宽度	8
功能数量	1
端口数量	1
端子数量	240
字数	134217728 words
字数代码	128000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度
组织	128MX8
输出特性	3-STATE
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装等效代码	DIMM240,40
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
峰值回流温度（摄氏度）	260
电源	1.8 V
认证状态	Not Qualified
刷新周期	8192
座面最大高度	30 mm
自我刷新	YES
最大待机电流	0.128 A
最大压摆率	1.72 mA
最大供电电压 (Vsup)	1.9 V
最小供电电压 (Vsup)	1.7 V
标称供电电压 (Vsup)	1.8 V
表面贴装	NO
技术	CMOS
温度等级	OTHER
端子形式	NO LEAD
端子节距	1 mm
端子位置	ZIG-ZAG
处于峰值回流温度下的最长时间	20
宽度	4 mm

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240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.

This Hynix unbuffered Dual In-Line Memory Module(DIMM) series consists of 512Mb C ver. DDR2 SDRAMs

in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb C ver. based

DDR2 Unbuffered DIMM series provide a high performance 8 byte interface in 133.35mm width form factor

of industry standard. It is suitable for easy interchange and addition.

FEATURES

•

JEDEC standard Double Data Rate2 Synchro-

nous DRAMs (DDR2 SDRAMs) with 1.8V +/-

0.1V Power Supply

•

All inputs and outputs are compatible with

SSTL_1.8 interface

•

4 Bank architecture

Posted CAS

Programmable CAS Latency 3 , 4 , 5, 6

•

OCD (Off-Chip Driver Impedance Adjustment)

•

ODT (On-Die Termination)

Fully differential clock operations (CK & CK)

Lead-free Products are RoHS compliant

•

Programmable Burst Length 4 / 8 with both

sequential and interleave mode

Auto refresh and self refresh supported

Partial Array Self Refresh supported

8192 refresh cycles / 64ms

Serial presence detect with EEPROM

DDR2 SDRAM Package: 60ball FBGA(64Mx8)

133.35 x 30.00 mm form factor

ORDERING INFORMATION

Part Name

HMP512U6FFP8C-Y5/S5/S6

HMP564U7FFP8C-Y5/S5/S6

HMP512U7FFP8C-Y5/S5/S6

Density

1GB

512MB

1GB

Organization

128Mx64

64Mx72

128Mx72

# of

DRAMs

# of

ranks

Materials

Lead free

ECC

None

ECC

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.1 / Jun 2008

HMP512U6FFP8C-S6相似产品对比

	HMP512U6FFP8C-S6	HMP512U6FFP8C-S5	HMP512U7FFP8C-S5	HMP512U7FFP8C-Y5	HMP512U7FFP8C-S6	HMP512U6FFP8C-Y5	HMP564U7FFP8C-S6	HMP564U7FFP8C-S5
描述	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.	240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb F ver.
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
厂商名称	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40	DIMM, DIMM240,40
针数	240	240	240	240	240	240	240	240
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli	compli
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST
最长访问时间	0.4 ns	0.4 ns	0.4 ns	0.45 ns	0.4 ns	0.45 ns	0.4 ns	0.4 ns
其他特性	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX	AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX
最大时钟频率 (fCLK)	400 MHz	400 MHz	400 MHz	333 MHz	400 MHz	333 MHz	400 MHz	400 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-XZMA-N203	R-XZMA-N203	R-XZMA-N203	R-XZMA-N200	R-XZMA-N200	R-XZMA-N203	R-PBGA-B84	R-PBGA-B84
长度	133.35 mm	133.35 mm	133.35 mm	133.35 mm	133.35 mm	133.35 mm	133.35 mm	133.35 mm
内存密度	1073741824 bi	1073741824 bi	1073741824 bi	1073741824 bi	1073741824 bi	1073741824 bi	536870912 bi	536870912 bi
内存集成电路类型	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	240	240	240	240	240	240	240	240
字数	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	67108864 words	67108864 words
字数代码	128000000	128000000	128000000	128000000	128000000	128000000	64000000	64000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
组织	128MX8	128MX8	128MX8	128MX8	128MX8	128MX8	64MX8	64MX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装等效代码	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40	DIMM240,40
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260	260	260	260	260	260	260	260
电源	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	8192	8192	8192	8192	8192	8192	8192	8192
座面最大高度	30 mm	30 mm	30 mm	30 mm	30 mm	30 mm	30 mm	30 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
最小供电电压 (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
标称供电电压 (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
表面贴装	NO	NO	NO	NO	NO	NO	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子节距	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
端子位置	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	ZIG-ZAG	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	20	20	20	20	20	20	20	20
宽度	4 mm	4 mm	4 mm	4 mm	4 mm	4 mm	2.7 mm	2.7 mm
最大待机电流	0.128 A	0.128 A	-	-	-	0.128 A	0.072 A	0.072 A
最大压摆率	1.72 mA	1.72 mA	-	-	-	1.64 mA	1.575 mA	1.575 mA

HMP512U6FFP8C-S6

HMP512U6FFP8C-S6概述

HMP512U6FFP8C-S6规格参数

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