HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Typical Applications
The HMC864 is ideal for:
• Point-to-Point Radios
Features
Saturated Output Power: +31 dBm @ 18% PAE
High Output IP3: +40 dBm
High Gain: 27 dB
DC Supply: +6V @ 750mA
No External Matching Required
Die Size: 2.41 x 1.65 x 0.1 mm
3
LINEAR & POWER AMPLIFIERS - CHIP
• Point-to-Multi-Point Radios
• VSAT
• Military & Space
Functional Diagram
General Description
The HMC864 is a three stage GaAs pHEMT MMIC
1 Watt Power Amplifier which operates between
24 and 29.5 GHz. The HMC864 provides 27 dB of
gain, and +31 dBm of saturated output power and
18% PAE from a +6V supply. The RF I/Os are DC
blocked and matched to 50 Ohms for ease of integra-
tion into Multi-Chip-Modules (MCMs). All data is taken
with the chip in a 50 Ohm test fixture connected via
0.025 mm (1 mil) diameter wire bonds of length 0.31
mm (12 mils).
Electrical Specifi cations,
T
A
= +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 750mA
[1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
[2]
Total Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd = 750mA typical.
[2] Measurement taken at +6V @ 750mA, Pout / Tone = +19 dBm
27
24
Min.
Typ.
24 - 27
27
0.021
27
19
29
31
39
750
27
22
Max.
Min.
Typ.
27 - 29.5
25
0.027
25
14
29
30
40
750
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
3 - 158
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Broadband Gain &
Return Loss vs. Frequency
30
20
Gain vs. Temperature
34
32
30
RESPONSE (dB)
10
0
-10
-20
-30
-40
21
24
GAIN (dB)
S21
S11
S22
28
26
24
22
20
18
+25C
+85C
-55C
3
24
25
26
27
28
29
30
27
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
Output Return Loss vs. Temperature
0
+25C
+85C
-55C
-5
RETURN LOSS (dB)
-15
-20
-25
-30
+25C
+85C
-55C
RETURN LOSS (dB)
-10
-10
-15
-20
-35
-40
24
25
26
27
28
29
30
-25
24
25
26
27
28
29
30
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Temperature
33
P1dB vs. Supply Voltage
33
31
31
P1dB (dBm)
29
P1dB (dBm)
29
27
27
25
+25C
+85C
-55C
25
6.0V
5.5V
5.0V
23
24
25
26
27
28
29
30
23
24
25
26
27
28
29
30
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 15
LINEAR & POWER AMPLIFIERS - CHIP
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Psat vs. Temperature
33
Psat vs. Supply Voltage
33
31
31
Psat (dBm)
29
Psat (dBm)
3
LINEAR & POWER AMPLIFIERS - CHIP
29
27
+25C
+85C
-55C
27
25
25
6.0V
5.5V
5.0V
23
24
25
26
27
28
29
30
23
24
25
26
27
28
29
30
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
33
Psat vs. Supply Current (Idd)
33
31
31
P1dB (dBm)
29
Psat (dBm)
29
27
27
700mA
750mA
800mA
25
700mA
750mA
800mA
25
23
24
25
26
27
28
29
30
23
24
25
26
27
28
29
30
FREQUENCY (GHz)
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +19 dBm
46
+25C
+85C
-55C
Output IP3 vs.
Supply Current, Pout/Tone = +19 dBm
46
700mA
750mA
800mA
44
44
IP3 (dBm)
42
IP3 (dBm)
42
40
40
38
38
36
24
25
26
27
28
29
30
36
24
25
26
27
28
29
30
FREQUENCY (GHz)
FREQUENCY (GHz)
3 - 160
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +19 dBm
46
6.0V
5.5V
5.0V
Output IM3 @ Vdd = +5V
60
50
44
IP3 (dBm)
40
42
IM3 (dBc)
3
12
14
16
18
20
22
24
26
30
40
20
38
10
36
24
25
26
27
28
29
30
0
FREQUENCY (GHz)
Pout/TONE (dBm)
Output IM3 @ Vdd = +5.5V
60
50
Output IM3 @ Vdd = +6V
60
50
40
40
30
24 GHz
26 GHz
28 GHz
29 GHz
30
20
20
24 GHz
26 GHz
28 GHz
29 GHz
10
10
0
12
14
16
18
20
22
24
26
0
12
14
16
18
20
22
24
26
Pout/TONE (dBm)
Pout/TONE (dBm)
Power Compression @ 27 GHz
35
Reverse Isolation vs. Temperature
0
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-15
-12
-9
-6
-3
0
3
6
9
REVERSE ISOLATION (dB)
30
-10
+25C
+85C
-55C
-20
-30
Pout
Gain
PAE
-40
-50
-60
24
25
26
27
28
29
30
INPUT POWER (dBm)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3 - 16
LINEAR & POWER AMPLIFIERS - CHIP
24 GHz
26 GHz
28 GHz
29 GHz
IM3 (dBc)
IM3 (dBc)
HMC864
v01.0110
GaAs pHEMT MMIC 1 WATT
POWER AMPLIFIER, 24 - 29.5 GHz
Gain & Power vs.
Supply Current @ 27 GHz
35
Gain (dB)
P1dB (dBm)
Psat (dBm)
Gain & Power vs.
Supply Voltage @ 27 GHz
35
GAIN (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
33
33
3
LINEAR & POWER AMPLIFIERS - CHIP
Gain (dB)
P1dB (dBm)
Psat (dBm)
31
31
29
29
27
27
25
700
720
740
760
780
800
25
5
5.2
5.4
5.6
5.8
6
Idd (mA)
Vdd (V)
Power Dissipation
6
POWER DISSIPATION (W)
5.5
24 GHz
25 GHz
26 GHz
27 GHz
28 GHz
5
4.5
4
-15
-12
-9
-6
-3
0
3
6
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vd)
RF Input Power (RFIN)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 75 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
+6.5V
+26 dBm
150 °C
4.85 W
13.4 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+5.0
+5.5
+6.0
Idd (mA)
750
750
750
Note: Amplifi er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 750mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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