HMC770LP4BE
v01.0310
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
Typical Applications
Features
High Output IP3: +40 dBm
Single Positive Supply: +5V
Low Noise Figure: 2.5 dB
[1]
Differential RF I/O’s
20 Lead 4x4 mm SMT Package: 16mm2
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
The HMC770LP4BE is ideal for:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
General Description
The HMC770LP4BE is a GaAs pHEMT Differential
Gain Block MMIC amplifier covering 40 MHz to 1
GHz and packaged in a 4x4 mm plastic QFN SMT
package. This versatile amplifier can be used as a
cascadable IF or RF gain stage in both 50 Ohm and
75 Ohm applications. The HMC770LP4BE delivers
16 dB gain, and +40 dBm output, with only 2.5 dB
noise figure. Differential I/Os make this amplifier ideal
for transimpedance and SAW filter applications, and
in transceivers where the IF path must be handled
differentially for improved noise performance.
Evaluation PCBs are all available with either SMA
(50Ω) or Type F (75Ω) connectors.
Electrical Specifi cations,
T
A
= +25° C, Vdd = Vdd1 = Vdd2 = +5V, Rbias = R1 = 200 Ω
[2]
Min.
Parameter
Zo = 50 Ohms
Frequency Range
Gain
[2]
Typ.
Max.
Min.
Typ.
Zo =75 Ohms
0.04 - 1
Max.
Units
0.04 - 1
12
16.5
0.006
17
18
20
23
40
2.5
-
-
136
134
160
160
4
21
12
GHz
dB
dB / °C
dB
dB
dBm
dBm
4
dB
Ohms
pA / √Hz
160
160
mA
mA
16
0.008
15
15
23.5
37.5
2.75
700
6
136
134
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout = 0 dBm per tone, 1 MHz spacing)
Noise Figure
[2]
Transimpedance
Input Referred Current Noise
[3]
Supply Current 1 (Idd1)
Supply Current 2 (Idd2)
[1] 1:1 Balun losses have NOT been removed from measurements. See list of materials for eval PCB for the type of balun.
[2] See application circuit
[3] Includes balun loss, no photo diode. See list of materials for eval PCB for the type of balun.
8 - 202
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC770LP4BE
v01.0310
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
Gain & Return Loss
[1]
20
Gain vs. Temperature
[1]
20
8
+25C
+85C
-40C
10
RESPONSE (dB)
GAIN (dB)
S21
S11
S22
15
0
10
-10
5
-20
-30
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
Gain vs. Vdd
[1]
20
Gain vs. Rbias
20
15
GAIN (dB)
GAIN (dB)
15
10
4.5V
5.0V
5.5V
10
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
5
5
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
Return Loss vs. Temperature
[1]
0
-5
RETURN LOSS (dB)
-10
-15
-20
S11
Return Loss vs. Vdd
[1]
0
-5
RETURN LOSS (dB)
+25C
+85C
-40C
S22
-10
-15
-20
-25
-30
4.5V
5.0V
5.5V
S22
S11
-25
-30
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
[1] Rbias=R1=200 Ohms. See application circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8 - 20
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
HMC770LP4BE
v01.0310
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Return Loss vs. Rbias
0
-5
RETURN LOSS (dB)
-10
-15
-20
S11
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
Isolation vs. Rbias
0
-5
ISOLATION (dB)
-10
-15
-20
-25
-30
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
S22
-25
-30
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
Noise Figure vs. Temperature
8
[1]
Noise Figure vs. Temperature for Low
Frequencies
[1][2]
8
NOISE FIGURE (dB)
NOISE FIGURE (dB)
6
+25C
+85C
-40C
6
+25C
+85C
-40C
4
4
2
2
0
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
0
0
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
Noise Figure vs. Vdd
[1]
8
Noise Figure vs. Vdd for Low Frequencies
[1][2]
8
NOISE FIGURE (dB)
4
NOISE FIGURE (dB)
6
4.5V
5.0V
5.5V
6
4.5V
5.0V
5.5V
4
2
2
0
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
0
0
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
[1] Rbias=R1=200 Ohms. See application circuit.
[2] See application circuit for the tune for low frequencies.
8 - 204
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC770LP4BE
v01.0310
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
Noise Figure vs. Rbias
8
Noise Figure vs. Rbias for Low
Frequencies
[2]
8
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
NOISE FIGURE (dB)
4
NOISE FIGURE (dB)
6
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
6
Rbias=1.5k Ohms
Rbias=600 Ohms
Rbias=200 Ohms
4
2
2
0
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
0
0
25
50
75
100
125
150
175
200
FREQUENCY (MHz)
P1dB vs. Temperature
[1]
30
25
20
15
10
5
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
+25C
+85C
-40C
P1dB vs. Vdd
[1]
30
25
20
15
10
5
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
4.5V
5.0V
5.5V
P1dB (dBm)
P1dB vs. Rbias
[1]
30
25
20
15
10
5
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
[1] Rbias=R1=200 Ohms. See application circuit.
[2] See application circuit for the tune for low frequencies.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
P1dB (dBm)
P1dB (dBm)
8 - 20
HMC770LP4BE
v01.0310
GaAs pHEMT 50 / 75 Ohm
DIFFERENTIAL AMPLIFIER, 0.04 - 1 GHz
50 Ohm Data
Output IP3 vs. Temperature
[1]
Output IP3 vs. Vdd
[1]
50
45
40
35
30
+25C
+85C
-40C
4.5V
5.0V
5.5V
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
IP3 (dBm)
50
45
40
35
30
25
20
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
IP3 (dBm)
25
20
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
Output IP3 vs. Rbias
50
45
40
Idd vs. Rbias
400
350
300
4.5 V
5.0 V
5.5 V
IP3 (dBm)
Idd (mA)
Rbias = 1.5k Ohms
Rbias = 600 Ohms
Rbias = 200 Ohms
250
200
150
35
30
100
25
20
0
0.2
50
0
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
200
400
600
800
1000
1200
1400
1600
Rbias (Ohm)
[1] Rbias=R1=200 Ohms. See application circuit
8 - 206
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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