HMC753LP4E
v01.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
Features
Noise Figure: 1.5 dB @ 4 GHz
Gain: 17 dB
P1dB Output Power: +18 dBm
Supply Voltage: +5V @ 55 mA
Output IP3: +30 dBm
50 Ohm matched Input/Output
24 Lead Plastic 4x4mm SMT Package: 16mm
2
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
This HMC753LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
Functional Diagram
General Description
The HMC753LP4E is a GaAs MMIC Low Noise
Wideband Amplifier housed in a leadless 4x4 mm
plastic surface mount package. The amplifier oper-
ates between 1 and 11 GHz, providing up to 16.5 dB
of small signal gain, 1.5 dB noise figure, and output
IP3 of +30 dBm, while requiring only 55 mA from a
+5V supply. The P1dB output power of up to +18
dBm enables the LNA to function as a LO driver for
balanced, I/Q or image reject mixers. The HMC-
753LP4E also features I/Os that are DC blocked and
internally matched to 50 Ohms, making it ideal for
high capacity microwave radios or VSAT applications.
This versatile LNA is also available in die form as the
HMC-ALH444.
Electrical Specifi cations
,
T
A
= +25° C, Vdd= +5V, Idd = 55 mA
[2]
Parameter
Frequency Range
Gain
Gain Variation over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
(Vdd = 5V, set Vgg2 = 1.5V, Vgg1 = -0.8V Typ.)
14
Min.
Typ.
1-6
16.5
0.004
1.5
11
18
18
20
30
55
2
10
Max.
Min.
Typ.
6 - 11
14
0.008
2
8
12
15
17
28
55
2.7
Max.
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
dBm
dBm
mA
8 - 366
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC753LP4E
v01.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
Broadband Gain & Return Loss
25
[1]
Gain vs. Temperature
[1]
18
8
LOW NOISE AMPLIFIERS - SMT
15
16
RESPONSE (dB)
5
GAIN (dB)
S11
S22
S21
14
-5
+25C
+85C
-40C
12
-15
-25
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
10
1
3
5
7
9
11
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
Output Return Loss vs. Temperature
0
+25C
+85C
-40C
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
9
11
-5
-10
+25C
+85C
-40C
-10
-15
-15
-20
-20
-25
1
3
5
7
FREQUENCY (GHz)
-25
1
3
5
7
9
11
FREQUENCY (GHz)
Noise Figure vs. Temperature
[1]
10
+25C
+85C
-40C
Output IP3 vs. Temperature
35
30
25
8
NOISE FIGURE (dB)
6
IP3 (dBm)
20
15
+25C
+85C
-40C
4
2
10
5
1
3
5
7
9
11
1
3
5
7
9
11
FREQUENCY (GHz)
FREQUENCY (GHz)
0
[1] Board loss subtracted out for gain, power and noise figure measurement
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 36
HMC753LP4E
v01.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
8
LOW NOISE AMPLIFIERS - SMT
P1dB vs. Temperature
[1]
25
Psat vs. Temperature
[1]
24
20
P1dB (dBm)
Psat (dBm)
20
15
+25C
+85C
-40C
16
+25C
+85C
-40C
10
12
5
8
0
1
3
5
7
9
11
FREQUENCY (GHz)
4
1
3
5
7
9
11
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
-60
1
3
5
7
9
11
FREQUENCY (GHz)
+25C
+85C
-40C
Power Compression @ 21 GHz
[1]
24
Pout (dBm), GAIN (dB), PAE (%)
20
16
12
8
4
0
-4
-20
Pout
Gain
PAE
-15
-10
-5
0
5
INPUT POWER (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 21 GHz
[1]
22
20
GAIN (dB), P1dB (dBm)
18
16
14
12
10
8
4.5
5
Vdd (V)
7
6
5
4
3
2
1
0
5.5
NOISE FIGURE (dB)
[1] Board loss subtracted out for gain, power and noise figure measurement
8 - 368
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC753LP4E
v01.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
Absolute Maximum Ratings
Drain Bias Voltage
RF Input Power
Gate Bias Voltage, Vgg1
Gate Bias Voltage, Vgg2
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 8.4 mW/°C above 85 °C)
Thermal Resistance
(Channel to die bottom)
Storage Temperature
Operating Temperature
+6.0V
12 dBm
-1 to 0.3V
0 to 2.5V
180 °C
0.8 W
119 °C/W
-65 to +150 °C
-40 to +85 °C
8
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY.
3. LEAD AND GROUND PADDLE PLATING: 100% MATTE TIN
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
6. PAD BURR LENGTH SHALL BE 0.15mm MAX. PAD BURR HEIGHT SHALL
BE 0.05mm MAX.
7. PACKAGE WARP SHALL NOT EXCEED 0.05mm
8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND
PATTERN.
Package Information
Part Number
HMC753LP4E
Package Body Material
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
100% matte Sn
[2]
Package Marking
[1]
753
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 36
LOW NOISE AMPLIFIERS - SMT
HMC753LP4E
v01.0609
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 1 - 11 GHz
8
LOW NOISE AMPLIFIERS - SMT
Pin Descriptions
Pin Number
1, 2, 4 - 7, 12 - 15,
17 - 19, 24
3
Function
GND
Description
Package bottom has exposed metal paddle
that must be connected to RF/DC ground.
This pad is AC coupled
and matched to 50 Ohms.
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
Interface Schematic
RFIN
8, 9
Vgg2, 1
10
Vdd
Power Supply Voltage for the amplifier. See assembly for
required external components.
11, 20 - 23
16
N/C
RFOUT
This pad is AC coupled and matched to
50 Ohms.
Application Circuit
8 - 370
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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