HMC741ST89E
v01.1209
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Typical Applications
Features
P1dB Output Power: +18.5 dBm
Gain: 20 dB
Output IP3: +42 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V
Industry Standard SOT89 Package
Robust 1000V ESD, Class 1C
Stable Current Over Temperature
Active Bias Network
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
The HMC741ST89E is ideal for:
• Cellular/3G & WiMAX/4G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
• IF & RF Applications
Functional Diagram
General Description
The HMC741ST89E is an InGaP Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering 0.05 to 3 GHz. Packaged in an
industry standard SOT89, the amplifier can be used
as a cascadable 50 Ohm RF or IF gain stage as well
as a PA or LO driver with up to +18.5 dBm output
power. The HMC741ST89E offers 20 dB of gain with
a +42 dBm output IP3 at 200 MHz, and can operate
directly from a +5V supply. The HMC741ST89E
exhibits excellent gain and output power stability over
temperature, while requiring a minimal number of
external bias components.
Electrical Specifi cations,
Vcc = 5V, T
A
= +25° C
Parameter
Frequency Range
Gain
Gain Flatness
Gain Variation over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression
(P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone,
1 MHz spacing)
Noise Figure
Supply Current (Icq)
16
19
Min.
Typ.
150
20
±0.3
0.004
16
17
25
18.8
16
19
Max.
Min.
Typ.
240
21
±0.3
0.004
16
17
25
18.8
16
16
Max.
Min.
Typ.
50 - 1000
20
±0.3
0.004
16
17
25
18.8
14
0.01
12
Max.
Min.
Typ.
50 - 3000
19
±2.6
0.004
12
12
26
16
0.01
Max.
Units
MHz
dB
dB
dB/ °C
dB
dB
dB
dBm
40.5
2.5
96
40.5
2.5
96
40.5
2.5
96
30
2.5
96
dBm
dB
mA
9 - 182
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC741ST89E
v01.1209
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
IF Band Performance
Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
-30
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
0
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
5
S21
S11
S22
Gain vs. Temperature
30
25
20
15
10
+25C
+85C
-40C
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Noise Figure vs. Temperature
8
7
NOISE FIGURE (dB)
6
5
4
3
2
1
0
0
0.2
0.4
0.6
0.8
1
FREQUENCY (GHz)
+25C
+85C
-40C
Output IP3 vs. Temperature
50
45
40
35
30
25
20
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
+25C
+85C
-40C
Output IP3 vs. Vcc
50
45
40
35
30
25
20
0
0.2
0.4
0.6
FREQUENCY (GHz)
0.8
1
Output IP3 vs. Output Power
50
45
40
35
IP3 (dBm)
4.5V
5.0V
5.5V
IP3 (dBm)
IP3 (dBm)
GAIN (dB)
30
25
20
15
10
5
0
-5
0
5
Pout (dBm)
10
15
100MHz
400MHz
1GHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 18
HMC741ST89E
v01.1209
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Broadband Performance
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Gain & Return Loss
25
20
15
RESPONSE (dB)
10
0
-5
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
5
S21
S11
S22
Gain vs. Temperature
30
25
20
15
10
5
0
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
+25C
+85C
-40C
Gain vs. Vcc
25
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
+25C
+85C
-40C
20
GAIN (dB)
15
4.5V
5.0V
5.5V
10
5
0
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
GAIN (dB)
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
+25C
+85C
-40C
Input Return Loss vs. Vcc
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
4.5V
5.0V
5.5V
9 - 184
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC741ST89E
v01.1209
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
Output Return Loss vs. Vcc
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
4.5V
5.0V
5.5V
Noise Figure vs. Temperature
8
7
NOISE FIGURE (dB)
6
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
+25C
+85C
-40C
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Noise Figure vs. Vcc
8
7
NOISE FIGURE (dB)
6
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
4.5V
5.0V
5.5V
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-5
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
+25C
+85C
-40C
Reverse Isolation vs. Vcc
0
REVERSE ISOLATION (dB)
-5
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
4.5V
5.0V
5.5V
Output IP3 vs. Temperature
50
45
40
35
IP3 (dBm)
30
25
20
15
10
5
0
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
+25C
+85C
-40C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
9 - 18
HMC741ST89E
v01.1209
InGaP HBT ACTIVE BIAS
MMIC AMPLIFIER, 0.05 – 3 GHz
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Output IP3 vs. Vcc
50
45
40
Current vs. Temperature
140
+25C
+85C
-40C
120
CURRENT (mA)
2.5
3
35
IP3 (dBm)
30
25
20
15
10
5
0
0
0.5
1
1.5
2
FREQUENCY (GHz)
4.5V
5.0V
5.5V
100
80
60
40
4.5
4.75
5
VOLTAGE (V)
5.25
5.5
P1dB vs. Temperature
20
Psat vs. Temperature
20
15
P1dB (dBm)
Psat (dBm)
15
10
+25C
+85C
-40C
10
+25C
+85C
-40C
5
5
0
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
0
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
3
Power Compression @ 500 MHz
25
Pout (dBm), GAIN (dB), PAE (%)
20
15
10
5
0
-5
-20
Pout
Gain
PAE
Power Compression @ 2 GHz
25
Pout (dBm), GAIN (dB), PAE (%)
20
15
10
5
0
-5
-20
Pout
Gain
PAE
-17
-14
-11
-8
-5
INPUT POWER (dBm)
-2
1
-17
-14
-11
-8
-5
INPUT POWER (dBm)
-2
1
9 - 186
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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