HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
LOW NOISE AMPLIFIERS - SMT
Typical Applications
The HMC566LP4E is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment and Sensors
• Military & Space
Features
Low Noise Figure: 2.8 dB
High Gain: 21 dB
High OIP3: +24 dBm
Single Positive Supply: +3V @ 82 mA
50 Ohm Matched & DC Blocked I/Os
24 Lead 4x4mm QFN Package: 16mm2
Functional Diagram
General Description
The HMC566LP4E is a high dynamic range GaAs
pHEMT MMIC Low Noise Amplifier (LNA) in a
4x4 mm SMT package which operates from 28 to
36 GHz. The HMC566LP4E provides 21 dB of small
signal gain, 2.8 dB of noise figure and output IP3 of
24 dBm. This self-biased LNA is ideal for hybrid and
MCM assemblies due to its compact size, single
+3V supply operation, and DC blocked RF I/O’s.
The RoHS packaged HMC566LP4E eliminates the
need for wirebonding and allows the use of high
volume surface mount manufacturing techniques.
The HMC566LP4E is also available in chip form as
the HMC566.
Electrical Specifi cations,
T
A
= +25° C, Vdd 1, 2, 3, 4 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd1+Idd2+Idd3+Idd4)
50
18
Min.
Typ.
28 - 31.5
21
0.03
2.8
14
8
11
13
23.5
82
106
50
3.6
19.5
Max.
Min.
Typ.
31.5 - 33.5
22.5
0.03
2.8
18
10
12
14
24.5
82
106
50
3.6
18
Max.
Min.
Typ.
33.5 - 36
21
0.03
3.3
12
7
11
13
24.5
82
106
4.3
Max.
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
8 - 190
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
-20
-25
22
24
26
28
30
32
34
36
38
40
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
30
28
26
24
GAIN (dB)
22
20
18
16
14
12
10
26
28
30
32
34
36
38
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
8
LOW NOISE AMPLIFIERS - SMT
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
26
28
30
32
34
36
38
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Output Return Loss vs. Temperature
0
RETURN LOSS (dB)
-5
-10
-15
+25 C
+85 C
- 40 C
-20
26
28
30
32
34
36
38
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
+25 C
+85 C
-40 C
Reverse Isolation vs. Temperature
0
-10
ISOLATION (dB)
-20
-30
-40
-50
+25 C
+85 C
- 40 C
8
NOISE FIGURE (dB)
6
4
2
-60
0
26
28
30
32
34
36
38
FREQUENCY (GHz)
-70
26
28
30
32
34
36
38
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 19
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
LOW NOISE AMPLIFIERS - SMT
P1dB vs. Temperature
18
16
14
P1dB (dBm)
12
10
8
6
4
26
28
30
32
34
36
38
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Psat vs. Temperature
18
16
14
Psat (dBm)
12
10
8
6
4
26
28
30
32
34
36
38
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Output IP3 vs. Temperature
30
28
26
IP3 (dB)
24
22
20
18
16
14
26
28
30
32
34
36
38
FREQUENCY (GHz)
+25 C
+85 C
- 40 C
Power Compression @ 32 GHz
25
Pout (dBm), GAIN (dB), PAE (%)
20
Pout
Gain
PAE
15
10
5
0
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
INPUT POWER (dBm)
Gain, Noise Figure & Power vs.
Supply Voltage @ 32 GHz
30
27
GAIN (dB), P1dB (dBm)
24
21
18
15
12
9
6
3
0
2.5
3
Vdd (V)
Noise Figure
Gain
P1dB
Absolute Maximum Ratings
10
9
8
7
6
5
4
3
2
1
0
3.5
Drain Bias Voltage (Vdd1, 2, 3, 4)
RF Input Power (RFIN)(Vdd = +3 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 9.6 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
NOISE FIGURE (dB)
+3.5 V
+5 dBm
175 °C
0.8 W
104 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8 - 192
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
Typical Supply Current vs. Vdd
Vdd (V)
+2.5
+3.0
+3.5
Idd (mA)
79
82
85
8
LOW NOISE AMPLIFIERS - SMT
Note: Amplifi er will operate over full voltage ranges shown
above.
Pin Descriptions
Pin Number
1, 2, 4 - 7, 12 - 15,
17 - 19, 24
Function
GND
Description
This pins and exposed ground paddle
must be connected to RF/DC ground.
This pin is AC coupled
and matched to 50 Ohms.
No Connection
This pin is AC coupled
and matched to 50 Ohms.
Interface Schematic
3
RFIN
8 - 11
N/C
16
RFOUT
23, 22, 21, 20
Vdd1, 2, 3, 4
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF, 10 nF and 4.7 μF are required.
Application Circuit
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 19
HMC566LP4E
v02.0609
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 28 - 36 GHz
8
LOW NOISE AMPLIFIERS - SMT
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
HMC566LP4E
Package Body Material
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
100% matte Sn
[2]
Package Marking
[1]
H566
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
8 - 194
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
