128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | SK Hynix(海力士) |
| 零件包装代码 | BGA |
| 包装说明 | VFBGA, BGA90,9X15,32 |
| 针数 | 90 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST |
| 最长访问时间 | 5 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 166 MHz |
| I/O 类型 | COMMON |
| 交错的突发长度 | 2,4,8 |
| JESD-30 代码 | R-PBGA-B90 |
| JESD-609代码 | e1 |
| 长度 | 13 mm |
| 内存密度 | 134217728 bi |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 32 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 90 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -25 °C |
| 组织 | 4MX32 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | VFBGA |
| 封装等效代码 | BGA90,9X15,32 |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 电源 | 1.8 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 座面最大高度 | 1 mm |
| 自我刷新 | YES |
| 连续突发长度 | 2,4,8 |
| 最大待机电流 | 0.0003 A |
| 最大压摆率 | 0.12 mA |
| 最大供电电压 (Vsup) | 1.95 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 宽度 | 8 mm |
| H5MS1222EFP-J3E | H5MS1222EFP-K3M | H5MS1222EFP-J3M | H5MS1222EFP-K3E | H5MS1222EFP-Q3E | |
|---|---|---|---|---|---|
| 描述 | 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O | 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O | 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O | 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O | 128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 零件包装代码 | BGA | BGA | BGA | BGA | BGA |
| 包装说明 | VFBGA, BGA90,9X15,32 | VFBGA, BGA90,9X15,32 | VFBGA, BGA90,9X15,32 | VFBGA, BGA90,9X15,32 | VFBGA, BGA90,9X15,32 |
| 针数 | 90 | 90 | 90 | 90 | 90 |
| Reach Compliance Code | compli | compliant | compli | compli | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 166 MHz | 133 MHz | 166 MHz | 133 MHz | 185 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON |
| 交错的突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
| JESD-30 代码 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 | R-PBGA-B90 |
| JESD-609代码 | e1 | e1 | e1 | e1 | e1 |
| 长度 | 13 mm | 13 mm | 13 mm | 13 mm | 13 mm |
| 内存密度 | 134217728 bi | 134217728 bit | 134217728 bi | 134217728 bi | 134217728 bi |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 90 | 90 | 90 | 90 | 90 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -25 °C | -30 °C | -30 °C | -25 °C | -25 °C |
| 组织 | 4MX32 | 4MX32 | 4MX32 | 4MX32 | 4MX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | VFBGA | VFBGA | VFBGA | VFBGA | VFBGA |
| 封装等效代码 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 | BGA90,9X15,32 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| 电源 | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 |
| 座面最大高度 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
| 自我刷新 | YES | YES | YES | YES | YES |
| 连续突发长度 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 | 2,4,8 |
| 最大供电电压 (Vsup) | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER |
| 端子面层 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) |
| 端子形式 | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
| 最长访问时间 | 5 ns | 6 ns | 5 ns | 6 ns | - |
| 最大待机电流 | 0.0003 A | 0.0003 A | 0.0003 A | 0.0003 A | - |
| 最大压摆率 | 0.12 mA | 0.1 mA | 0.12 mA | 0.1 mA | - |
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