PTFA180701E
PTFA180701F
Thermally-Enhanced High Power RF LDMOS FETs
70 W, 1805 – 1880 MHz
Description
The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed
for GSM and GSM EDGE power amplifier applications in the 1805 MHz to
1880 MHz band. Features include input and output matching, and thermally-
enhanced packages with slotted or earless flanges. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFA180701E
Package H-36265-2
PTFA180701F
Package H-37265-2
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 550 mA, ƒ = 1836.6 MHz
5
50
Features
•
•
•
40
Thermally-enhanced packages, Pb-free and
RoHS-compliant
Broadband internal matching
Typical EDGE performance
- Average output power = 44 dBm
- Gain = 16.5 dB
- Efficiency = 40.5%
- EVM = 2.0%
Typical CW performance
- Output power at P–1dB = 72 W
- Gain = 15.5 dB
- Efficiency = 59%
Integrated ESD protection: Human Body
Model, Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
70 W (CW) output power
4
Efficiency
EVM RMS (avg. %)
.
3
30
Drain Efficiency (%)
•
2
20
1
10
EVM
0
30
32
34
36
38
40
42
44
46
0
•
•
•
Output Power, avg. (dBm)
RF Characteristics
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 44 dBm, ƒ = 1836.6 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum
@ 400 kHz
@ 600 kHz
Gain
Drain Efficiency
All published data at T
CASE
= 25°C unless otherwise indicated
Symbol
EVM RMS
ACPR
ACPR
G
ps
Min
—
—
—
—
—
Typ
2.0
–62
–76
16.5
40.5
Max
—
—
—
—
—
Unit
%
dBc
dBc
dB
%
η
D
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.1, 2009-02-20
PTFA180701E
PTFA180701F
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 60 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
15.5
44
—
Typ
16.5
45
–30
Max
—
—
–29
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.125
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
D
= 550 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 70 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
201
1.15
–40 to +150
0.87
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA180701E
PTFA180701E
V4
V4
Package Type
H-36265-2
H-37265-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA180701E
PTFA180701F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 03.1, 2009-02-20
PTFA180701E
PTFA180701F
Typical Performance
(measurements taken in production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V
DD
= 28 V, ƒ = 1836.6 MHz, P
OUT
= 44 dBm
2.6
2.4
-10
-20
-30
60
Three-Carrier CDMA2000 Performance
V
DD
= 28 V, I
DQ
= 550 mA, ƒ = 1840 MHz
Modulation Spectrum (dBc)
ACP Low
-40
-45
-50
50
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.40
0.50
0.60
EVM
400 kHz
-40
-50
-60
-70
40
30
20
10
0
30
32
34
36
38
40
42
44
46
ACP Up
ALT Up
Efficiency
-55
-60
-65
-70
600 kHz
-80
-90
0.70
Quiescent Current (A)
Output Power, Avg. (dBm)
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 550 mA, ƒ = 1836.6 MHz
Intermodulation Distortion vs. Output Power
V
DD
= 28 V, I
DQ
= 550 mA, ƒ = 1840 MHz,
tone spacing = 1 MHz
-25
-30
70
60
-40
50
Modulation Spectrum (dBc)
Efficiency
Drain Efficiency (%)
-50
-60
-70
-80
-90
30
32
34
36
38
40
42
44
46
40
-35
3rd Order
5th
7th
50
40
30
20
10
IMD (dBc)
400 kHz
30
20
-40
-45
-50
-55
600 kHz
10
0
Efficiency
-60
30
35
40
45
50
0
Output Power (dBm)
Output Power, PEP (dBm)
Data Sheet
3 of 11
Rev. 03.1, 2009-02-20
Efficiency (%)
Adj. Ch. Power Ratio (dBc)
EVM RMS (avg. %)
.
Drain Efficiency (%)
PTFA180701E
PTFA180701F
Typical Performance
(cont.)
Broadband Test Fixture Performance (P–1dB)
V
DD
= 28 V, I
DQ
= 550mA
19
70
CW Broadband Performance
V
DD
= 28 V, I
DQ
= 550 mA, P
OUT
= 43 dBm
55
50
40
30
Drain Efficiency
Output Power (dBm) &
Efficiency (%)
18
17
60
50
Efficiency (%)
45
40
35
30
25
Gain
Efficiency
20
10
0
-10
Output Power
16
15
14
1760
40
30
Gain
Return Loss
-20
1800
1840
1880
20
1920
-30
20
1760 1780 1800 1820 1840 1860 1880 1900 1920
Frequency (MHz)
Frequency (MHz)
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V, ƒ
1
= 1849, ƒ
2
= 1840 MHz
18.0
Power Sweep
V
DD
= 28 V, ƒ = 1880 MHz
-20
-25
-30
I
DQ
= 275 mA
I
DQ
= 825 mA
17.5
I
DQ
= 825 mA
IMD (dBc)
-35
-40
-45
-50
-55
-60
26
30
Power Gain (dB)
17.0
16.5
16.0
15.5
15.0
14.5
I
DQ
= 550 mA
I
DQ
= 550 mA
I
DQ
= 275 mA
35
37
39
41
43
45
47
49
34
38
42
46
Output Power, Avg. (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03.1, 2009-02-20
Gain, Return Loss (dB)
Gain (dB)
PTFA180701E
PTFA180701F
Typical Performance
(cont.)
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 550 mA, ƒ = 1880 MHz
Output Power
(P–1dB)
vs. Drain Voltage
I
DQ
= 550 mA, ƒ = 1880 MHz
64
58
20
19
18
50
Gain (dB)
17
16
15
14
13
12
0
Gain
46
40
34
28
22
16
10
Output Power (dBm)
Drain Efficiency (%)
Efficiency
52
49
48
47
46
24
26
28
30
32
10
20
30
40
50
60
70
80
Output Power (W)
Drain Voltage (V)
IS-95 CDMA Performance
V
DD
= 28 V, I
DQ
= 550 mA, ƒ = 1840 MHz
T
CASE
= 25°C
T
CASE
= 90°C
Efficiency
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
-30
45
40
1.03
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
Drain Efficiency (%)
35
30
25
20
15
10
5
0
ACP ƒ
C
– 0.75 MHz
-40
-45
-50
-55
-60
-65
-70
-75
Normalized Bias Voltage (V)
Adj. Ch. Power Ratio (dBc)
-35
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
ACPR ƒ
C
+ 1.98 MHz
30
32
34
36
38
40
42
44
46
Output Power, Avg. (dBm)
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 03.1, 2009-02-20
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