v01.0701
MICROWAVE CORPORATION
HMC324MS8G
Features
P1dB Output Power: +16 dBm
Output IP3: +30 dBm
Gain: 13 dB
Single Supply: 8.75V
Ultra Small Package: MSOP8G
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
1
AMPLIFIERS - SMT
Typical Applications
This Amplifier is ideal for RF Systems
where high linearity is required such as:
• CATV Head-End and Modem
• Cellular & Base Stations
• MMDS
• WirelessLAN
Functional Diagram
General Description
The HMC324MS8G is a high efficiency GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC ampli-
fier that contains two non-connected amplifiers in
parallel inside an 8 lead MSOPG package. When
used in conjunction with an external balun, the out-
puts of the amplifier can be combined to reduce
the 2nd harmonic distortion that is generated by
the amplifier. With Vcc at +7.5V, the HMC324MS8G
offers 13 dB of gain and with power combining and
harmonic cancellation, +24 dBm of output power
can be achieved. Using a Darlington feedback pair
results in reduced sensitivity to normal process vari-
ations and provides a good 50-ohm input/output
port match. This amplifier is ideal for RF systems
where high linearity is required and can operate in
50-ohm and 75-ohm systems.
Electrical Specifications,
T
A
= +25° C
Vs= +8.75V, Rbias= 22 Ohm
Parameter
Min.
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1dB Compression (P1dB) @ 1 GHz
Saturated Output Power (Psat) @ 1 GHz
Output Third Order Intercept (IP3) @ 1 GHz
Noise Figure
Supply Current (Icc)
10
6
16
13
18
27
10
Typ.
DC - 3.0
13
0.015
15
9
20
16
21
30
6
57
16
0.025
Max.
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
dB
mA
Units
Note: All specifications refer to a single amplifier.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 158
v01.0701
MICROWAVE CORPORATION
HMC324MS8G
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
GaAs MMIC
PUMPED MIXER
Gain & Return Loss
SUB-HARMONICALLY
Gain vs. Temperature
20
15
10
20
18
16
S21
S11
S22
17 - 25 GHz
1
RESPONSE (dB)
5
0
-5
-10
-15
-20
-25
0
1
14
GAIN (dB)
10
8
6
4
2
0
+25 C
+60 C
-40 C
2
3
4
5
6
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
+25 C
+60 C
-40 C
Output Return Loss vs. Temperature
0
-5
OUTPUT RETURN LOSS (dB)
INPUT RETURN LOSS (dB)
-5
-10
-10
-15
-15
-20
+25 C
+60 C
-40 C
-25
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
-20
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-5
-10
-15
-20
-25
-30
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
+25 C
+60 C
-40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
REVERSE ISOLATION (dB)
1 - 15
AMPLIFIERS - SMT
12
v01.0701
MICROWAVE CORPORATION
HMC324MS8G
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
GaAs MMIC SUB-HARMONICALLY
Psat vs. Temperature
PUMPED MIXER
P1dB vs. Temperature
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
+25 C
+60 C
-40 C
17 - 25 GHz
1
AMPLIFIERS - SMT
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
+25 C
+60 C
-40 C
P1dB (dBm)
Power Compression @ 1 GHz
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-20 -18 -16 -14 -12 -10 -8 -6 -4 -2
Power Compression @ 2 GHz
18
Psat (dBm)
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
16
14
12
10
8
6
4
2
0
-2
-4
-6
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
Pout
Gain
PAE
Pout
Gain
PAE
0
2
4
6
8 10 12
INPUT POWER (dBm)
INPUT POWER (dBm)
Output IP3 vs. Temperature
34
32
30
28
+25 C
+60 C
-40 C
IP3 (dBm)
26
24
22
20
18
16
14
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
1 - 160
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
v01.0701
MICROWAVE CORPORATION
HMC324MS8G
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
Absolute Maximum Ratings
DC Voltage on Pin 1
Input Power (RFin)(Vcc= +5V)
Channel Temperature (Tc)
Continuous Pdiss (T= 85 °C)
(derate 4.41 mW/°C above 85 °C)
Storage Temperature
Operating Temperature
8 Volts
+20 dBm
150 °C
507 mW
-65 to +150° C
-40 to +85° C
1
Outline Drawing
1. MATERIAL:
A. PACKAGE BODY - LOW STRESS INJECTION-MOLDED
PLASTIC, SILICA & SILICONE INPREGNATED.
B. LEADFRAME MATERIAL: COPPER ALLOY
2. PLATING: LEAD-TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS)
4. CHARACTERS TO BE HELVETICA MEDIUM, .030 HIGH
USING WHITE INK, LOCATED APPROX AS SHOWN
5. DIMENSION DOES NOT INCLUDE MOLDFLASH
OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH
OF 0.25mm PER SIDE.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1 - 16
AMPLIFIERS - SMT
v01.0701
MICROWAVE CORPORATION
HMC324MS8G
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
Application Circuit
1
AMPLIFIERS - SMT
Note:
1. Select Rbias to achieve desired Vcc voltage on Pin 1 and 4.
2. External blocking capacitors are required on Pins 1, 4, 5, and 8.
1 - 162
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
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