HMC300LM1
v02.1201
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 25.5 - 33.5 GHz
8
AMPLIFIERS - SMT
Typical Applications
This amplifier is ideal for use as a power amplifier
for 25.5 - 33.5 GHz applications:
• LMDS
• Microwave Radio
Features
SMT mmWave Package
Gain > 15 dB
Broadband Performance
Saturated Output Power: +24 dBm
Positive Supply: +5V to +7V
Functional Diagram
General Description
The HMC300LM1 is a broadband surface mount
medium power amplifier that operates between 25.5
and 33.5 GHz. A 0.25 um power pHEMT process is
used to achieve efficient gain and output power
performance. High volume surface mount re-flow
assembly techniques may be used to mount the
amplifier to the end user’s PCB. The LM1 package
eliminates the need for wire bonding or die attach
mounting. The amplifier provides 15 dB of gain and
+24 dBm of saturated output power across various
microwave radio bands. This millimeter wave
amplifier requires no external RF matching
components and minimal DC bypass components.
The amplifier operates from a +6V Vdd and a -
0.35V Vgg gate bias.
Electrical Specifications,
T
A
= +25° C, Vdd = +6V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(Two-tone Input Power = -5 dBm each tone)
Supply Current (Idd)(Vdd = +6.0 Vdc)*
5
5
35
20
21
21
13
Min.
Typ.
25.5 - 33.5
16
0.06
8
8
50
23
24
26
220
275
22
0.07
Max.
Units
GHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
*Adjust Vgg 1 between -1.0 to 0V to achieve Idd = 220 mA typical.
8 - 28
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC300LM1
v02.1201
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 25.5 - 33.5 GHz
Broadband Gain & Return Loss
25
20
15
RESPONSE (dB)
10
Gain vs. Temperature @ Vdd = +6V
25
8
AMPLIFIERS - SMT
20
GAIN (dB)
5
0
-5
-10
-15
-20
-25
20
25
30
S21
S11
S22
15
10
+25 C
+85 C
-40 C
5
0
35
40
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs.
Temperature @ Vdd = +6V
0
Output Return Loss vs.
Temperature @ Vdd = +6V
0
RETURN LOSS (dB)
-10
RETURN LOSS (dB)
-5
-5
-10
-15
+25 C
+85 C
-40 C
-15
+25 C
-40 C
+85 C
-20
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
-20
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
P1dB Output Power vs.
Temperature @ Vdd = +6V
30
25
Output P1dB (dBm)
20
15
10
5
0
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Output IP3 vs.
Temperature @ Vdd = +6V
THIRD ORDER INTERCEPT POINT (dBm)
35
30
25
20
15
10
5
0
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
+25 C
+85 C
-40 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 29
HMC300LM1
v02.1201
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 25.5 - 33.5 GHz
8
AMPLIFIERS - SMT
Gain vs. Vdd
25
Input Return Loss vs. Vdd
0
20
RETURN LOSS (dB)
-5
GAIN (dB)
15
-10
10
Vdd=+5V
Vdd=+6V
Vdd=+7V
-15
5
Vdd=+5V
Vdd=+6V
Vdd=+7V
0
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
-20
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
Output Return Loss vs. Vdd
0
P1dB Output Power vs. Vdd
30
25
RETURN LOSS (dB)
Output P1dB (dBm)
-5
20
15
10
5
0
Vdd=+5V
Vdd=+6V
Vdd=+7V
-10
-15
Vdd=+5V
Vdd=+6V
Vdd=+7V
-20
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
PSAT Output Power vs. Vdd
30
25
20
15
10
5
0
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
Vdd=+5V
Vdd=+6V
Vdd=+7V
IP3 vs. Vdd
THIRD ORDER INTERCEPT POINT (dBm)
35
30
25
20
15
10
5
0
24
25
26
27
28
29
30
31
32
33
34
35
FREQUENCY (GHz)
Vdd=+5V
Vdd=+6V
Vdd=+7V
Psat (dBm)
8 - 30
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC300LM1
v02.1201
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 25.5 - 33.5 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
Drain Bias Current (Idd)
Gate Bias Voltage (Vgg1)
RF Input Power (RFin)(Vdd = +6.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 15.03 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
+5.0 Vdc
500 mA
-2.0 to +0.4 Vdc
+17 dBm
150 °C
0.977 W
67 °C/W
-65 to +150 °C
-40 to +85°C
8
AMPLIFIERS - SMT
NOTES:
1. MATERIAL: PLASTIC
2. PLATING: GOLD OVER NICKEL
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. ALL TOLERANCES ARE ± 0.005 [± 0.13].
5. ALL GROUNDS MUST BE SOLDERED TO PCB RF GROUND.
6.
Outline Drawing
Pin
1
2
3
4
5
6
7
8
Function
GND
Vdd1
Vdd2
RF OUT
GND
Vgg1
GND
RF IN
•
INDICATES PIN 1
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 31
HMC300LM1
v02.1201
SMT MEDIUM POWER GaAs MMIC
AMPLIFIER, 25.5 - 33.5 GHz
8
AMPLIFIERS - SMT
Evaluation PCB
The grounded Co-Planar Wave Guide (CPWG) PCB input/output transitions allow use of Ground-Signal-Ground
(GSG) probes for testing. Suggested probe pitch is 400μm (16 mils). Alternatively, the board can be mounted in a
metal housing with 2.4 mm coaxial connectors.
Evaluation Circuit Board Layout Design Details
Layout Technique
Material
Dielectric Thickness
Microstrip Line Width
CPWG Line Width
CPWG Line to GND Gap
Ground Via Hole Diameter
C1
C2
Micro Strip to CPWG
Rogers 4003 with 1/2 oz. Cu
0.008” (0.20 mm)
0.018” (0.46 mm)
0.016” (0.41 mm)
0.005” (0.13 mm)
0.008” (0.20 mm)
100 pF Capacitor, 0402 Pkg.
33,000 pF Capacitor, 1206 Pkg.
LM1 Package Mounted to Evaluation PCB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 32
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