v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Typical Applications
The HMC294 is ideal for:
• Microwave Point-to-Point Radios
• LMDS
• SATCOM
Features
Input IP3: +20 dBm
LO / RF Isolation: 27 dB
Passive: No DC Bias Required
Small Size: 0.88 mm x 1.93 mm
5
MIXERS - CHIP
Functional Diagram
General Description
The HMC294 chip is a miniature passive GaAs
MMIC double-balanced mixer which can be used
as an upconverter or downconverter from 25 - 40
GHz in a small chip area of 1.70 mm
2
. Excellent
isolations are provided by on-chip baluns, which
require no external components and no DC bias.
All data is measured with the chip in a 50 ohm
test fixture connected via 0.076 mm (3 mil) gold
ribbon of minimal length <0.31 mm (<12 mils).
Electrical Specifi cations,
T
A
= +25° C, LO Drive = +14 dBm
Parameter
Frequency Range, RF & LO
Frequency Range, IF
Conversion Loss
Noise Figure (SSB)
LO to RF Isolation
LO to IF Isolation
RF to IF Isolation
IP3 (Input)
IP2 (Input)
1 dB Gain Compression (Input)
22
31
27
15
24
9
Min.
Typ.
25 - 40
DC - 2
10
10
27
38
33
20
35
12
13
13
Max.
Units
GHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
5 - 82
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Conversion Gain vs.
Temperature @ LO = +14 dBm
0
Isolation @ LO = +14 dBm
0
RF/IF
LO/RF
LO/IF
CONVERSION GAIN (dB)
-10
-5
ISOLATION (dB)
-55 C
+25 C
+85 C
-20
-10
-30
-15
-40
-20
20
25
30
FREQUENCY (GHz)
35
40
-50
20
25
30
FREQUENCY (GHz)
35
40
5
MIXERS - CHIP
35
40
35
40
Conversion Gain vs. LO Drive
0
+8 dBm
+10 dBm
+12 dBm
+14 dBm
+16 dBm
Return Loss @ LO = +14 dBm
0
CONVERSION GAIN (dB)
RETURN LOSS (dB)
-5
-5
-10
-10
LO
RF
-15
-20
20
25
30
FREQUENCY (GHz)
35
40
-15
20
25
30
FREQUENCY (GHz)
IF Bandwidth @ LO = +14 dBm
0
Upconverter Performance
Conversion Gain @ LO = +14 dBm
0
CONVERSION GAIN (dB)
IF CONVERSION GAIN
IF RETURN LOSS
-5
IF BANDWIDTH
-5
-10
-10
-15
-15
-20
0
2
4
IF FREQUENCY (GHz)
6
8
-20
20
25
30
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 83
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Input IP3 vs. LO Drive
30
+8 dBm
+12 dBm
+10 dBm
+14 dBm
Input IP3 vs.
Temperature @ LO = +14 dBm
30
25
INPUT IP3 (dBm)
25
INPUT IP3 (dBm)
20
20
15
15
-55 C
+25 C
+85 C
10
10
5
MIXERS - CHIP
5
20
25
30
FREQUENCY (GHz)
35
40
5
20
25
30
FREQUENCY (GHz)
35
40
Input IP2 vs. LO Drive
50
Input IP2 vs.
Temperature @ LO = +14 dBm
50
40
INPUT IP2 (dBm)
INPUT IP2 (dBm)
40
30
30
20
+8 dBm
+10 dBm
+12 dBm
+14 dBm
20
-55 C
+25 C
+85 C
10
10
0
20
25
30
FREQUENCY (GHz)
35
40
0
20
25
30
FREQUENCY (GHz)
35
40
Input P1dB vs.
Temperature @ LO = +14 dBm
16
MxN Spurious Outputs
nLO
mRF
0
xx
25
1
3.9
0
91
47
59
>110
86
68
>110
105
106
2
3
4
14
INPUT P1dB
0
1
2
12
10
-55 C
+25 C
+85 C
3
4
8
RF = 35 GHz @ -10 dBm
LO = 34 GHz @ +14 dBm
All values in dBc below the IF power level.
40
6
20
25
30
FREQUENCY (GHz)
35
5 - 84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Absolute Maximum Ratings
RF / IF Input
LO Drive
Storage Temperature
Operating Temperature
+13 dBm
+27 dBm
-65 to +150 °C
-55 to +125 °C
5
Outline Drawing
Die Packaging Information
[1]
Standard
WP-4
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 85
MIXERS - CHIP
v01.0300
HMC294
GaAs MMIC DOUBLE-BALANCED
MIXER, 25 - 40 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin film substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the
surface of the substrate. One way to accomplish this is to attach the 0.102mm
(4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab)
which is then attached to the ground plane (Figure 2).
Ribbon Bond
5
MIXERS - CHIP
Microstrip substrates should be brought as close to the die as possible in order
to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3
mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12
mils) is recommended to minimize inductance on RF, LO & IF ports.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage:
All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness:
Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity:
Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients:
Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling:
Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or fingers.
Ribbon Bond
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms
or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
5 - 86
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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