HMC280MS8G
/
280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
8
AMPLIFIERS - SMT
Typical Applications
The HMC280MS8G / HMC280MS8GE is ideal for:
• UNII & HiperLAN
• ISM
Features
Psat Output Power: +24 dBm
Output IP3: +38 dBm
High Gain: 18 dB
Single Supply: +3.6V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC280MS8G & HMC280MS8GE are +3.6V
GaAs MMIC power amplifiers covering 5 to 6 GHz.
The device is packaged in a low cost, surface mount
8 lead MSOP plastic package with an exposed base
paddle for improved RF ground and thermal dissipa-
tion. The amplifier provides 18 dB of gain and 24 dBm
Psat while operating from a single positive supply.
External component requirements are minimal with
the amplifier occupying less than 0.023 sq. in. (14.6
sq. mm). All data is taken with the amplifier assem-
bled into a 50 ohm test fixture with the exposed base
paddle connected to RF ground.
Electrical Specifications,
T
A
= +25° C, Vdd= +3.6V
Parameter
Frequency Range
Gain
Gain Flatness
Input Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Idd)(Vdd1 = Vdd2 = +3.6 Vdc)
5.0 - 5.5 Ghz
5.0 - 6.0 Ghz
8
40
20
18
21
33
14
Min.
Typ.
5.0 - 6.0
19
±1.0
12
44
23
22
24
38
13
480
23
Max.
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
dB
mA
8-2
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC280MS8G
/
280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
Broadband Gain & Return Loss
20
15
RESPONSE (dB)
10
5
0
-5
-10
-15
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
Gain vs. Temperature @ 3.6V
30
25
8
AMPLIFIERS - SMT
GAIN (dB)
S11
S21
S22
20
15
10
5
0
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
-40 C
+25 C
+70 C
Psat vs. Supply Voltage
30
28
OUTPUT PSAT (dBm)
Psat vs. Temperature @ 3.6V
30
28
OUTPUT PSAT (dBm)
26
24
22
20
18
16
14
4.5
-40 C
+25 C
+70 C
26
24
22
20
18
16
14
4.5
5V
3.6V
3.3V
3V
2.7V
5
5.5
6
5
5.5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB vs. Supply Voltage
30
28
OUTPUT P1dB (dBm)
26
24
22
20
18
16
14
4.5
5V
3.6V
3.3V
3V
2.7V
P1dB vs. Temperature @ 3.6V
30
28
OUTPUT P1dB (dBm)
26
24
22
20
18
16
14
4.5
-40 C
+25 C
+70 C
5
5.5
6
5
5.5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-3
HMC280MS8G
/
280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
8
AMPLIFIERS - SMT
Power Compression @ 5.25 GHz
30
Pout (dBm), GAIN (dB), PAE (%)
25
20
15
10
5
0
-10
Output Power (dBm)
Gain (dB)
PAE (%)
Output IP3 vs Supply Voltage @ 6.0 GHz
50
45
40
OIP3 (dBm)
35
30
25
20
2.5
-40 C
+25 C
+70 C
-5
0
5
10
15
3
3.5
4
4.5
5
5.5
INPUT POWER (dBm)
Vdd SUPPLY VOLTAGE (Vdc)
Output IP3 vs. Temperature @ 3.6V
50
45
40
OIP3 (dBm)
35
30
25
20
4.5
-40 C
+25 C
+70 C
Output IP3 vs. Temperature @ 5.0V
50
45
40
OIP3 (dBm)
35
30
25
20
4.5
-40 C
+25 C
+70 C
5
5.5
6
5
5.5
6
FREQUENCY (GHz)
FREQUENCY (GHz)
Reverse Isolation @ 3.6V
0
-10
-20
-30
-40
-50
-60
4.5
REVERSE ISOLATION (dB)
5
5.5
6
FREQUENCY (GHz)
8-4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC280MS8G
/
280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFin) (Vdd = +3.6 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 41 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle )
Storage Temperature
Operating Temperature
+8.0 Vdc
+14 dBm
150 °C
2.67 W
24.3 °C/W
-65 to +150 °C
-55 to +85 °C
8
AMPLIFIERS - SMT
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Outline Drawing
Package Information
Part Number
HMC280MS8G
HMC280MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H280
XXXX
H280
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8-5
HMC280MS8G
/
280MS8GE
v04.0605
GaAs MMIC POWER AMPLIFIER
5.0 - 6.0 GHz
8
AMPLIFIERS - SMT
Reco
mmended PCB Layout
List of Materials for Evaluation PCB 103103
[1]
Item
J1, J2
J3, J4, J5
C1, C2
C3, C4
L1
U1
PCB
[2]
Description
PCB Mount SMA Connector
DC Pins
1000 pF Capacitor, 0603 Pkg.
100 pF Capacitor, 0402 Pkg.
3.9 nH Inductor, 0402 Pkg.
HMC280MS8G / HMC280MS8GE
Amplifier
103104 Evaluation Board
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 ohm impedance while the
package ground leads and exposed paddle should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation circuit board shown is avail-
able from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Roger 4350
8-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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